http://dspace.nbuv.gov.ua:80/handle/123456789/132697 2026-04-12T14:21:30Z 2026-04-12T14:21:30Z Belyaeva, A. Galuza, A. Kolomiets, S. http://dspace.nbuv.gov.ua:80/handle/123456789/135079 2018-06-15T00:04:21Z 2006-01-01T00:00:00Z

Synthesis of optimal multilayer periodic systems: multicriterial approach and realization of synthesized system Belyaeva, A.; Galuza, A.; Kolomiets, S. A novel effective approach to formulation and solving of a multilayer system synthesis problem has been developed. The main characteristics of the system spectrum are used as quality criteria to formulate the multicriteria optimization problem. The preliminary analysis of a specific system has been shown to simplify the optimization procedure essentially and to obtain a unique solution of the problem. A set of examples illustates the efficiency of the developed approach. Physical reasons for deviations of experimentally realized system from the synthesized one have been formulated.

2006-01-01T00:00:00Z Pelikhaty, N.M. Rokhmanov, N.Ya. Onischnko, V.V. http://dspace.nbuv.gov.ua:80/handle/123456789/135078 2018-06-15T00:06:55Z 2006-01-01T00:00:00Z

The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals Pelikhaty, N.M.; Rokhmanov, N.Ya.; Onischnko, V.V. Behavior of internal friction δ and electric resistance in silicon single crystals with low dislocation density (10-100 cm⁻²) has been studied during of bombardment with α-particles. Effect of strengthening has been found as well as change of direct hysteresis into reverse one in amplitude dependence of internal friction at increasing α-irradiation dose rate. The fact is explained by blocking of charged dislocations by radiation-induced vacancies and areas of charge separetion formed due to secondary infrared irration.

2006-01-01T00:00:00Z Boyarintsev, A.Yu. Gektin, A.V. Shlyakhturov, V.V. http://dspace.nbuv.gov.ua:80/handle/123456789/135077 2018-06-15T00:07:03Z 2006-01-01T00:00:00Z

The stress-strain state of deformed NaCI type single crystals with the sample height smaller than the base side Boyarintsev, A.Yu.; Gektin, A.V.; Shlyakhturov, V.V. A real modelling of the mass transfer process in a crystal by visualization of the crystal material motion under deformatioin using markers as well as structure studied have revealed inhomogeneity in the stress fields and in the crystal dislocation structure. Four crystal regions have been distinguished differing in the dislocation structures and the dislocation interaction mechanisms. For each region, the structure evolution has been studied and the structure state diagram has been constructed as a function of the prestrainin rate.

2006-01-01T00:00:00Z Matsokin, V.P. Pakhomova, I.N. http://dspace.nbuv.gov.ua:80/handle/123456789/135076 2018-06-15T00:07:03Z 2006-01-01T00:00:00Z

Mechanisms of the high-temperature internal stresses relaxation during creep in alkali-halide single crystals Matsokin, V.P.; Pakhomova, I.N. The process of internal stresses relaxation at jump-like change of external stresses is experimentally investigated during creep of NaCI and KCI single crystals. The basic relaxation processes have been considered and some of those have been simulated.

2006-01-01T00:00:00Z