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<title>Физика низких температур, 2012, № 08</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/115093" rel="alternate"/>
<subtitle/>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/115093</id>
<updated>2026-04-06T02:40:02Z</updated>
<dc:date>2026-04-06T02:40:02Z</dc:date>
<entry>
<title>Low Temperature Spectroscopy and Radiation Effects. To the anniversary of E.V. Savchenko</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/119102" rel="alternate"/>
<author>
<name>Arakawa, I.</name>
</author>
<author>
<name>Räsänen, M.</name>
</author>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/119102</id>
<updated>2017-06-05T00:02:51Z</updated>
<published>2012-01-01T00:00:00Z</published>
<summary type="text">Low Temperature Spectroscopy and Radiation Effects. To the anniversary of E.V. Savchenko
Arakawa, I.; Räsänen, M.
</summary>
<dc:date>2012-01-01T00:00:00Z</dc:date>
</entry>
<entry>
<title>Impurity and vacancy effects in graphene</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/117436" rel="alternate"/>
<author>
<name>Loktev, V.M.</name>
</author>
<author>
<name>Pogorelov, Yu.G.</name>
</author>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/117436</id>
<updated>2017-05-24T00:04:02Z</updated>
<published>2012-01-01T00:00:00Z</published>
<summary type="text">Impurity and vacancy effects in graphene
Loktev, V.M.; Pogorelov, Yu.G.
A Green function analysis has been developed for quasiparticle spectrum of a 2D graphene sheet in presence&#13;
of different types of substitutional disorder, including vacancies. The anomalous character of impurity effects in&#13;
this system is demonstrated, compared to those in well known doped semiconductors, and explained in terms of&#13;
conical singularities in the band spectrum of pure graphene. The criteria for appearance of localized states on&#13;
clusters of impurity scatterers and for qualitative restructuring of band spectrum are established and a possibility&#13;
for a specific metal/insulator transition at presence of vacancies is indicated.
</summary>
<dc:date>2012-01-01T00:00:00Z</dc:date>
</entry>
<entry>
<title>Phase transitions in thermally annealed films of Alq₃</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/117435" rel="alternate"/>
<author>
<name>Baldacchini, G.</name>
</author>
<author>
<name>Chiacchiaretta, P.</name>
</author>
<author>
<name>Pode, R.B.</name>
</author>
<author>
<name>Vincenti, M.A.</name>
</author>
<author>
<name>Wang, Q.-M.</name>
</author>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/117435</id>
<updated>2017-05-24T00:03:44Z</updated>
<published>2012-01-01T00:00:00Z</published>
<summary type="text">Phase transitions in thermally annealed films of Alq₃
Baldacchini, G.; Chiacchiaretta, P.; Pode, R.B.; Vincenti, M.A.; Wang, Q.-M.
Organic light emitting devices have been so very much improved lately that they are being widely applied for&#13;
displays and lighting. Among many improving technologies, annealing processes in different atmospheres affect&#13;
greatly their performance, for instance when the active material is the small molecule Alq3. In particular, a significant&#13;
increase of the photoluminescence is observed in thin films of this molecule between 150 and 180 °C, before&#13;
the physical destruction of the films occurs at higher temperatures. This phenomenon is attributed to a phase transition&#13;
towards a novel morphological aggregation of the molecules in the film, which proved to be a much improved&#13;
optical material for luminescent applications, and which seems common to other molecules as well.
</summary>
<dc:date>2012-01-01T00:00:00Z</dc:date>
</entry>
<entry>
<title>Optical spectroscopy and microscopy of radiationinduced light-emitting point defects in lithium fluoride crystals and films</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/117434" rel="alternate"/>
<author>
<name>Montereali, R.M.</name>
</author>
<author>
<name>Bonfigli, F.</name>
</author>
<author>
<name>Menchini, F.</name>
</author>
<author>
<name>Vincenti, M.A.</name>
</author>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/117434</id>
<updated>2017-05-24T00:03:25Z</updated>
<published>2012-01-01T00:00:00Z</published>
<summary type="text">Optical spectroscopy and microscopy of radiationinduced light-emitting point defects in lithium fluoride crystals and films
Montereali, R.M.; Bonfigli, F.; Menchini, F.; Vincenti, M.A.
Broad-band light-emitting radiation-induced F₂ and F₃⁺&#13;
 electronic point defects, stable and laser-active at&#13;
room temperature in lithium fluoride crystals and films, find applications in dosimeters, tuneable color-center lasers,&#13;
broad-band miniaturized light sources and in novel radiation imaging detectors. A brief review of their&#13;
photoemission properties is presented, and their peculiarities at liquid nitrogen temperature are discussed. A few&#13;
experimental results about optical spectroscopy and fluorescence microscopy of these radiation-induced point&#13;
defects in LiF crystals and thin films are presented to obtain information about the coloration curves, the point&#13;
defects formation efficiency, the effects of the photo-bleaching processes, and so on. The control of local formation,&#13;
stabilization and transformation of radiation-induced light-emitting defect centers is crucial for the development&#13;
of optical active micro-components and nanostructures. Some of the advantages of low temperature&#13;
measurements for novel confocal laser scanning fluorescence microscopy techniques, widely used for the spatial&#13;
mapping of these point defects thorough the optical reading of their visible photoluminescence, are highlighted.
</summary>
<dc:date>2012-01-01T00:00:00Z</dc:date>
</entry>
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