http://dspace.nbuv.gov.ua:80/handle/123456789/114630 2026-04-05T16:56:43Z 2026-04-05T16:56:43Z Dyadyusha, A.G. Gvozdovsky, I.A. Salkova, E.N. Terenetskaya, I.P. http://dspace.nbuv.gov.ua:80/handle/123456789/120261 2017-06-12T00:04:35Z 1999-01-01T00:00:00Z

Development of personal biodosimeter of UV radiation based on vitamin D photosynthesis in nematic liquid crystal matrix Dyadyusha, A.G.; Gvozdovsky, I.A.; Salkova, E.N.; Terenetskaya, I.P. A new approach to the problem of personal UV biodosimeter is described. Nematic liquid crystal (LC-805) is converted into induced cholesteric phase using photosensitive chiral dopant of steroid biomolecules (7-dehydrocholesterol (provitamin D3) or 7-DHC-benzoate). Significant changes in optical characteristics of the LC films depending on the duration of UV exposure are observed as a result of UV initiated photoisomerizations that change helical twisting power of dopant molecules.

1999-01-01T00:00:00Z Finkelshtein, S.H. Sorokin, V.M. Rakitin, S.A. Sevostyanov, V.P. http://dspace.nbuv.gov.ua:80/handle/123456789/120260 2017-06-12T00:05:13Z 1999-01-01T00:00:00Z

Residual atmosphere in vacuum fluorescent displays Finkelshtein, S.H.; Sorokin, V.M.; Rakitin, S.A.; Sevostyanov, V.P. This paper is devoted to problems of gassing in vacuum fluorescent displays (VFD). Technique of qualitative and quantitative analysis of residual atmosphere in VFDs is presented. Also, dynamics of residual gas pressure under different modes of VFD operation is considered.

1999-01-01T00:00:00Z Atroshchenko, L.V. Galkin, S.N. Galchinetskii, L.P. Lalayants, A.I. Rybalka, I.A. Ryzhikov, V.D. Silin, V.I. Starzhinskii, N.G. http://dspace.nbuv.gov.ua:80/handle/123456789/120259 2017-06-12T00:04:34Z 1999-01-01T00:00:00Z

Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties Atroshchenko, L.V.; Galkin, S.N.; Galchinetskii, L.P.; Lalayants, A.I.; Rybalka, I.A.; Ryzhikov, V.D.; Silin, V.I.; Starzhinskii, N.G. Relationship between preparation conditions of the raw charge, crucible material, growth regimes and structure defectness and electrophysical properties of crystals Cd₁₋x ZnxTe has been studied. The crystals were grown both from the raw material which had been pre-synthesized in quartz ampoules and from the raw material synthesized from the elements directly in the growth furnace. It is shown that the best values of electric resistivity ρ (up to 10¹¹ Ohm⋅cm) and sensitivity to X-ray and gamma-radiation are obtained for crystals grown in crucibles of highly pure coal-graphite material from the pre-synthesized raw charge. Correlation has been established between values of ρ and crystal defectness: decrease of dislocation density by 10⁴ times led to 10⁷ times higher values of resistivity. Concentration of dislocation etching pits regularly decreased with higher purity of the raw material and optimization of crystal preparation technology.

1999-01-01T00:00:00Z Shcherbak, L.P. Feichouk, P.I. Plevachouk, Yu.A. Kopach, O.V. Turyanska, L.T. http://dspace.nbuv.gov.ua:80/handle/123456789/120258 2017-06-12T00:05:22Z 1999-01-01T00:00:00Z

Pre- and postmelting of cadmium telluride Shcherbak, L.P.; Feichouk, P.I.; Plevachouk, Yu.A.; Kopach, O.V.; Turyanska, L.T. A stepwise character of cadmium telluride melting is shown by using differential thermal analysis and conductivity measurements in the 1323 to 1473 K temperature range. According to the results of differential thermal analysis the parameters of CdTe melting are determined by the premelting processes that are related to defect production in crystal lattice. The crystallization processes are controlled with the melt state (structure) that depends on its maximum temperature.

1999-01-01T00:00:00Z