http://dspace.nbuv.gov.ua:80/handle/123456789/114613 2026-04-07T13:59:50Z 2026-04-07T13:59:50Z Sokolov, V.N. Shwarts, Yu.M. http://dspace.nbuv.gov.ua:80/handle/123456789/121193 2017-06-14T00:07:26Z 2002-01-01T00:00:00Z

Effect of nonuniform doping profile on thermometric performance of diode temperature sensors Sokolov, V.N.; Shwarts, Yu.M. A theoretical investigation of the influence of a nonuniform doping concentration to the temperature response curve of diode temperature sensors is presented, which is the first effort in this field important for diffused diodes used as the temperature sensors. The current-voltage characteristic, from which the temperature response curve can be obtained, has been calculated using the model of a one-dimensional exponentially graded p-n junction with uniformly doped base region and the diffusion current of the minority carriers through the p-n junction. We show that depending on the doping gradient both contributions to the current coming from the electron and hole current components appear to be of the same order of magnitude. That is in contrast to the prediction of the widely used asymmetrical step junction model. It follows from numerical calculations that an effective shift of the temperature response curve due to nonuniformly doped emitter region in the temperature equivalent can reach the value of about 20 K. The limiting temperature Tm in the temperature response curve that restricts its extent into the high temperature range has been analyzed depending on the excitation current, the doping concentration of the base, and the p-n junction depth.

2002-01-01T00:00:00Z Savchyn, V.P. Stakhira, J.M. Fiyala, Ya.M. Furtak, V.B. http://dspace.nbuv.gov.ua:80/handle/123456789/121192 2017-06-14T00:07:22Z 2002-01-01T00:00:00Z

Photoelectric properties of ₂O₃-pGaSe-pInSe cascade heterostructures Savchyn, V.P.; Stakhira, J.M.; Fiyala, Ya.M.; Furtak, V.B. Cascade heterostructure of nGa₂O₃-pGaSe-pInSe was created, and a corresponding band energy diagram was built. Electrical and photoelectric properties of this structure were investigated. Due to isotype pGaSe-pInSe heterojunction the photosensitivity spectrum of nGa₂O₃-pGaSe-pInSe heterostructure extends up to 1.2 eV in IR range as referred to the photosensitivity spectrum of anisotype nGa₂O₃-pGaSe heterojunction.

2002-01-01T00:00:00Z Konakova, R.V. Milenin, V.V. Stovpovoi, M.A. http://dspace.nbuv.gov.ua:80/handle/123456789/121191 2017-06-14T00:07:20Z 2002-01-01T00:00:00Z

Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures Konakova, R.V.; Milenin, V.V.; Stovpovoi, M.A. The work deals with study and optimization of the technological parameters of ohmic contacts for HEMTs. It is shown that the depth of fusion front penetration into semiconductor is the main factor that determines ohmic properties of contact junctions.

2002-01-01T00:00:00Z Lopiitchouk, M. Peshko, I. http://dspace.nbuv.gov.ua:80/handle/123456789/121190 2017-06-14T00:07:17Z 2002-01-01T00:00:00Z

Solid-state laser with self-stabilized or linearly chirped output frequency Lopiitchouk, M.; Peshko, I. The specific regimes of the linear tuning and the frequency self-stabilization were proposed and analyzed theoretically in a diode pumped solid-state laser with a thin-film metallic selector.

2002-01-01T00:00:00Z