http://dspace.nbuv.gov.ua:80/handle/123456789/114611 2026-04-09T09:24:54Z 2026-04-09T09:24:54Z Freik, D.M. Nykyruy, L.I. Shperun, V.M. http://dspace.nbuv.gov.ua:80/handle/123456789/121369 2017-06-15T00:04:39Z 2002-01-01T00:00:00Z

Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS Freik, D.M.; Nykyruy, L.I.; Shperun, V.M. The theoretical analysis of carrier scattering mechanisms in electronic lead chalcogenide crystals was carried out. The calculation of carrier mobility in wide temperature (4.2-300 К) and concentration (10¹⁶-10²⁰ сm⁻³) ranges is carried out from the viewpoint of interaction of conductivity electrons with deformation potentials of acoustic and optical phonons, polarizing potential of optical phonons, screening Coulombic and short-range potentials of vacancies. It has been shown that the agreement of theoretical and experimental results takes place when taking into account the carrier scattering both on phonons and ionized vacancies.

2002-01-01T00:00:00Z Litvinov, V.L. Demakov, K.D. Agueev, O.A. Svetlichny, A.M. Konakova, R.V. Lytvyn, P.M. Lytvyn, O.S. Milenin, V.V. http://dspace.nbuv.gov.ua:80/handle/123456789/121364 2017-06-15T00:02:54Z 2002-01-01T00:00:00Z

Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing Litvinov, V.L.; Demakov, K.D.; Agueev, O.A.; Svetlichny, A.M.; Konakova, R.V.; Lytvyn, P.M.; Lytvyn, O.S.; Milenin, V.V. Using X-ray phase analysis, Auger electron spectroscopy and atomic force microscopy, we investigated structural-phase transformations in the Ni/n-21R-SiC system induced by rapid thermal annealing in a vacuum (pressure of 10-² Pa) in the 450-1100 °С temperature range. It was found that modification of contact I-V curves from barrier-type to ohmic is due to appearance of local contact areas with different barrier heights (among them areas with ohmic conduction). Generation of the above nonuniformities results from intense heterodiffusion of the system components, as well as formation and recrystallization of various nickel silicide phases (differing in stoichiometry) and degradation of planar uniformity of both interface and Ni film.

2002-01-01T00:00:00Z Davidenko, N.A. Derevyanko, N.A. Fenenko, L.I. Ishchenko, A.A. Olkhovik, G.P. Smertenko, P.S. http://dspace.nbuv.gov.ua:80/handle/123456789/121361 2017-06-15T00:02:48Z 2002-01-01T00:00:00Z

Conductivity of sandwich-structures based on dye-doped photoconducting and non-photoconducting polymer films Davidenko, N.A.; Derevyanko, N.A.; Fenenko, L.I.; Ishchenko, A.A.; Olkhovik, G.P.; Smertenko, P.S. Electroconducting properties of sandwich-structure samples with films based on photoconducting polymer poly-N-epoxypropylcarbazole and non-photoconducting polyvinylethylal, doped by cationic, anionic, neutral and intraionic organic dyes are researched. It is revealed that, in thin polymer films with considerable dye concentration, the conductivity of organocomplexes, contrary to ionic and neutral dyes, changes the mechanism, is increased by some orders and weakly depends on polymer nature. Their conductivity is comparable to the analogous value of a sandwich-structure based on polyphenilenevinylene.

2002-01-01T00:00:00Z Konakova, R.V. Rengevych, O.E. Kurakin, A.M. Kudryk, Ya.Ya. http://dspace.nbuv.gov.ua:80/handle/123456789/121359 2017-06-15T00:02:55Z 2002-01-01T00:00:00Z

A universal automated complex for control and diagnostics of semiconductor devices and structures Konakova, R.V.; Rengevych, O.E.; Kurakin, A.M.; Kudryk, Ya.Ya. We present a universal automated complex for control and diagnostics. It is intended to measure static, pulse and capacitance-voltage characteristics of two- and three-terminal networks, both at room temperature and in 77-1000 K temperature range. A distinguishing feature of complex construction is the possibility for simulation of interrelation between parameters of the objects studied. The complex has been tested when studying the effect of g- and microwave radiations on parameters of gallium arsenide SB-FETs, GaN-based HEMTs and silicon carbide SBDs.

2002-01-01T00:00:00Z