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<title>Semicond. Physics Quantum Electronics &amp; Optoelectronics, 2003, № 2</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/114608" rel="alternate"/>
<subtitle/>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/114608</id>
<updated>2026-04-13T05:24:19Z</updated>
<dc:date>2026-04-13T05:24:19Z</dc:date>
<entry>
<title>Temperature dependence of luminescence pecularities in oxygen doped ZnTe films</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/118021" rel="alternate"/>
<author>
<name>Malushin, N.V.</name>
</author>
<author>
<name>Skobeeva, V.M.</name>
</author>
<author>
<name>Smyntyna, V.A.</name>
</author>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/118021</id>
<updated>2017-05-29T00:05:43Z</updated>
<published>2003-01-01T00:00:00Z</published>
<summary type="text">Temperature dependence of luminescence pecularities in oxygen doped ZnTe films
Malushin, N.V.; Skobeeva, V.M.; Smyntyna, V.A.
Temperature dependence of luminescence intensity inherent to zinc telluride films prepared by the method of vacuum deposition and containing an oxygen impurity was investigated. The model explaining non-monotonous behaviour of curve temperature dependence for the "oxygen" band (λmax = 650 nm) is offered. According to this model, during quenching luminescence, the centers of a luminescence and those of the majority carriers capture participate. Determined are the values of the activation energy and concentration of the appropriate centers at which abnormal dependence of luminescence intensity on the temperature is observed.
</summary>
<dc:date>2003-01-01T00:00:00Z</dc:date>
</entry>
<entry>
<title>Polarization and angular peculiarities of IR emission of thin film semiconductor structures</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/118020" rel="alternate"/>
<author>
<name>Kollyukh, O.G.</name>
</author>
<author>
<name>Liptuga, A.I.</name>
</author>
<author>
<name>Morozhenko, V.O.</name>
</author>
<author>
<name>Pipa, V.I.</name>
</author>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/118020</id>
<updated>2017-05-29T00:05:44Z</updated>
<published>2003-01-01T00:00:00Z</published>
<summary type="text">Polarization and angular peculiarities of IR emission of thin film semiconductor structures
Kollyukh, O.G.; Liptuga, A.I.; Morozhenko, V.O.; Pipa, V.I.
In this paper thermal radiation from plane-parallel semiconductor layers was investigated. Shown is that spectra of thermal radiation from structures has an oscillating character caused by multi-beam interference. It was shown that the density of thermal radiation, at its interference maximum, can be equal to half the density of thermal radiation from a blackbody source, at the same time at the interference minimum the value approached practically zero. In addition, the angular dependence of thermal radiation does not obey the Lambert law and demonstrates a non-monotonic character with clearly pronounced extrema.
</summary>
<dc:date>2003-01-01T00:00:00Z</dc:date>
</entry>
<entry>
<title>On thermal emission of small-sized radiator</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/118019" rel="alternate"/>
<author>
<name>Salkov, E.A.</name>
</author>
<author>
<name>Svechnikov, G.S.</name>
</author>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/118019</id>
<updated>2017-05-29T00:05:42Z</updated>
<published>2003-01-01T00:00:00Z</published>
<summary type="text">On thermal emission of small-sized radiator
Salkov, E.A.; Svechnikov, G.S.
Principle feasibility has been considered for a distant identification of a small-sized thermal radiator by means of detecting its thermal radiation. A single small-size radiator is phenomenologically treated within the black body model. It is shown to be possible to obtain a numeral evaluation of the temperature and the size of a small-size radiator through measurement of the thermal radiation fluctuations in case when optical image of the radiator is unavailable.
</summary>
<dc:date>2003-01-01T00:00:00Z</dc:date>
</entry>
<entry>
<title>Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/118018" rel="alternate"/>
<author>
<name>Abdizhaliev, S.K.</name>
</author>
<author>
<name>Ismailov, K.A.</name>
</author>
<author>
<name>Kamalov, A.B.</name>
</author>
<author>
<name>Kudrik, Ya.Ya.</name>
</author>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/118018</id>
<updated>2017-05-29T00:05:42Z</updated>
<published>2003-01-01T00:00:00Z</published>
<summary type="text">Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures
Abdizhaliev, S.K.; Ismailov, K.A.; Kamalov, A.B.; Kudrik, Ya.Ya.
We studied I-V curves of Au-TiBx-n-n⁺-GaAs and Au-TiBx-n-SiC 6Н surface-barrier structures. The structures were exposed to microwave treatments (frequency of 2.45 GHZ, irradiance of 1.5 W/cm², duration of 0-500 s). For these structures we measured how the Schottky barrier height and ideality factor depended on microwave treatment duration. It was shown that microwave treatments whose duration are up to 20 s do not impair the main structure parameters, while those with duration of 0.5-10 s may even improve these parameters.
</summary>
<dc:date>2003-01-01T00:00:00Z</dc:date>
</entry>
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