Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8

Zn and Mn impurity effect on electron and luminescent properties of porous silicon

2017-06-20T00:02:25Z

Zn and Mn impurity effect on electron and luminescent properties of porous silicon Primachenko, V.E; Kirillova, S.I.; Manoilov, E.G.; Kizyak, I.M.; Bulakh, B.M.; Chernobai, V.A.; Venger, E.F. Investigated in this work are por-Si/n-Si structures prepared by anodizing silicon in 1 % HF water solution, which was followed by natural aging in air and doping with Zn and Mn impurities. When aging, the oxide film of nanoelements in the above structures is substituted by a silicate one. Measurements of temperature dependencies (100...300 K) describing the capacitance photovoltage behavior caused by intense pulses (∼10²¹ quanta/cm2s) of red or white light enabled us to determine the following values and their changes: the boundary potential for n-Si, distribution of the concentration inherent to boundary electron states in the n-Si forbidden gap, concentration of traps for non-equilibrium holes at the interface por-Si/n-Si and in the por-Si layer. The substitution of the oxide film by the silicate one, the thickness of which can exceed the initial thickness of the oxide film, makes these structures more stable and results in sizable changes of spectral dependencies of the short-time (t < 250 ns) and integrated (t > 250 ns) photoluminescence relaxation components as well as shifts the latter into the shortwave range.

Review of monograph

2017-06-20T00:02:22Z

Review of monograph Svechnikov, S.V. Review of monograph: A.A. Akopyan, O. Yu. Borkovskaya, N.L. Dmitruk, A.V. Karimov, R.V. Konakova, V.V. Melenin, A.V. Sachenko, M.N. Tursunov, D.M. Yodgorova. "Photoconverters with AlGaAs/GaAs Heterojunction on Textured GaAs Substrates (Physico-Technological aspects) -Fan Publishers, Tashkent, 2004

Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase

2017-06-20T00:02:24Z

Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase Feychuk, P.; Kopyl, O.; Pavlovich, I.; Shcherbak, L. A modified vapor phase growth method to obtain high-resistive Cd1-xZnxTe single crystals (0 < x < 0.13) is presented. The single crystals (about 25 cm⁻³ in size) with natural faceting were grown by vapor transport in silica ampoules with a special shape using a polycrystalline ingot as initial source material. It is shown that minimization of plastic deformation effect in preparation of the most structurally perfect crystals is possible by a way of heat removal from the crystallization front by radiation. The growth of high-resistive material required careful preparation of the initial charge with close to stoichiometric composition. The obtained crystals were successfully tested for creating the room temperature X-ray and gamma-ray detectors.

Polyassociative thermodynamical model of A²B⁶ semiconductor melt and phase equilibrium in Cd-Hg-Te system: 3. Optimization of the thermodynamical functions of the model and quasi-binary structural diagram of Cd-Hg-Te system

2017-06-16T00:03:15Z

Polyassociative thermodynamical model of A²B⁶ semiconductor melt and phase equilibrium in Cd-Hg-Te system: 3. Optimization of the thermodynamical functions of the model and quasi-binary structural diagram of Cd-Hg-Te system P.P., Moskvin; L.V., Rashkovetskiy; A.V., Stronski Within the frames of the model of the polyassociative solutions the comparative analysis was performed of the formation parameters of multi-atom complexes in CdTe and Hg-Te systems. It was shown, that thermodynamical properties of the studied systems can be described in the supposition of the presence in the liquid phase of the ATe, A₂Te₃, ATe₂, A₂Te (A = Cd, Hg) and free Te, Cd, Hg atoms. In accordance with the model of polyassociative solutions the data on p–T–x equilibrium in the region of quasi-binary cross-section of Cd-Hg-Te system structural diagram were obtained. It was shown, that the mixing effects in the three-component liquid phase are satisfactorily described by the formation of CdHgTe and CdHgTe₃ associates. The good correspondence of the calculations and experiment in the high temperature part of the Cd-Hg-Te system structural diagram was achieved.