http://dspace.nbuv.gov.ua:80/handle/123456789/114591 2026-04-06T11:13:42Z 2026-04-06T11:13:42Z Kolomzarov, Yu. Oleksenko, P. Sorokin, V. Tytarenko, P. Zelinskyy, R. http://dspace.nbuv.gov.ua:80/handle/123456789/121643 2017-06-16T00:04:04Z 2006-01-01T00:00:00Z

Surface microrelief obtained by composed target deposition for LC molecules alignment Kolomzarov, Yu.; Oleksenko, P.; Sorokin, V.; Tytarenko, P.; Zelinskyy, R. Technology of SiOx:In,Sn aligning films deposited by the cathode reactive sputtering (CRS) method is presented. The influence of In, Sn alloy surface concentration in Si cathode target on aligning film properties are investigated by the AFM and optical profilometry methods. The properties of aligning microrelief obtained by CRS method for various In, Sn concentration and by the polyimide rubbing method are compared. It was shown that such aligning microrelief can create defectless and perfect at the microscopic level nematic LC oriented structures.

2006-01-01T00:00:00Z Braginets, E.V. Girnyk, V.I. Kostyukevych, S.A. Kurashov, V.N. Soroka, A.A. Moskalenko, N. http://dspace.nbuv.gov.ua:80/handle/123456789/121642 2017-06-16T00:03:06Z 2006-01-01T00:00:00Z

Kinoform syntesis as an improved method to form a concealed image in optical security devices Braginets, E.V.; Girnyk, V.I.; Kostyukevych, S.A.; Kurashov, V.N.; Soroka, A.A.; Moskalenko, N. It is well known that one of the basic functions of security holograms is the maximal complication of their non-authorized reproduction, in other words – counterfeiting. To solve the problem, concealed images that can be observed only under special conditions are placed into a structure of the hologram. A popular way to place concealed image in Diffractive Optically Variable Image Device (DOVID) is integration into DOVID's structure of a Concealed Laser-Readable Image (CLRI). Traditionally CLRI is a 2D Computer-Generated Hologram (2D CGH), which is a digitized Interference Fringe Data (IFD) structure, computed under the scheme of Fourier-hologram synthesis. Such hologram provides inspection of the second level with portable laser reading devices. While it is being read, two (+/– 1 order of diffraction) identical images are formed. It is very interesting to achieve a CGH, which restores the image only in one diffractive order or two different images in +1 and –1 orders of diffraction.

2006-01-01T00:00:00Z Talanin, V.I. Talanin, I.E. Koryagin, S.A. Semikina, M.Yu. http://dspace.nbuv.gov.ua:80/handle/123456789/121641 2017-06-16T00:03:27Z 2006-01-01T00:00:00Z

Modelling vacancy microvoid formation in dislocation-free silicon single crystals Talanin, V.I.; Talanin, I.E.; Koryagin, S.A.; Semikina, M.Yu. An alternative mathematical model of vacancy microvoid formation in dislocation-free silicon single crystals was represented. The analysis of conditions of microvoid nucleation inside the bulk of crystals during cooling after their growth was carried out. The possibility of formation of a quasi-stationary microvoid profile in large-scale crystals within the temperature range 1130…1070 °С has been shown.

2006-01-01T00:00:00Z Mustafaeva, S.N. Ismailov, A.A. Akhmedzade, N.D. http://dspace.nbuv.gov.ua:80/handle/123456789/121640 2017-06-16T00:03:38Z 2006-01-01T00:00:00Z

Electric properties of TlInS₂ single crystals Mustafaeva, S.N.; Ismailov, A.A.; Akhmedzade, N.D. Injection currents are studied in high-resistive layer of TlInS2 single crystals and the following parameters were determined: equilibrium concentration of charge carriers in the allowed band p0 = 1.67⋅10¹⁰ cm⁻³; concentration of traps Nt = 10¹²cm⁻³; capture factor θ = 0.17; mobility of charge carriers μ = 3.3⋅10⁻³cm²/V⋅s; the depth of trap level responsible for the injection current Et = 0.44 eV.

2006-01-01T00:00:00Z