http://dspace.nbuv.gov.ua:80/handle/123456789/114586 2026-04-18T23:56:43Z 2026-04-18T23:56:43Z Shutov, S.V. Shtan’ko, A.D. Kurak, V.V. Litvinova, M.B. http://dspace.nbuv.gov.ua:80/handle/123456789/118345 2017-05-30T00:03:58Z 2007-01-01T00:00:00Z

Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing Shutov, S.V.; Shtan’ko, A.D.; Kurak, V.V.; Litvinova, M.B. The time dependences of changes of the electrophysical, mechanical, and light emitting characteristics of semiinsulated undoped GaAs single crystals on the dissolving annealing (Т = 1050 ºС) with the consequent quenching are obtained. The role of vacancies, interstitial point defects, and dislocations in nonstoichiometric crystals is revealed.

2007-01-01T00:00:00Z Khomenkova, L. Korsunska, N. Sheinkman, M. Stara, T. http://dspace.nbuv.gov.ua:80/handle/123456789/118344 2017-05-30T00:04:03Z 2007-01-01T00:00:00Z

Chemical composition and light emission properties of Si-rich-SiOx layers prepared by magnetron sputtering Khomenkova, L.; Korsunska, N.; Sheinkman, M.; Stara, T. The process of thermal decomposition of SiOx layers prepared by magnetron sputtering is studied with the use of photoluminescence and Auger and SIMS spectroscopies. From these measurements, we obtained the distributions of the emission properties and the chemical composition over the depth. The effect of the redistribution of silicon and oxygen over the depth is found after the high-temperature annealing which results in the formation of a Si nanocrystal. These redistributions result in the appearance of a Si-depleted region near the layer-substrate interface. The formation of a depletion layer is dependent on the excess of Si. A decrease of the silicon content over the depth of annealed layers is accompanied by a decrease of the Si nanocrystal size, as it is evidenced by the blue shift of the photoluminescence maximum. The mechanism of decomposition of SiOx and the possible reasons for the appearance of a Si-depleted region are discussed.

2007-01-01T00:00:00Z Grushko, E.V. Maslyanchuk, O.L. Mathew, X. Motushchuk, V.V. Kosyachenko, L.A. Streltsov, E.A. http://dspace.nbuv.gov.ua:80/handle/123456789/118343 2017-05-30T00:04:16Z 2007-01-01T00:00:00Z

Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure Grushko, E.V.; Maslyanchuk, O.L.; Mathew, X.; Motushchuk, V.V.; Kosyachenko, L.A.; Streltsov, E.A. A study of the Au/CdTe Schottky diodes fabricated by vacuum evaporation of a semitransparent Au layer over an electrodeposited CdTe thin film is reported. The theoretical model of the photocurrent spectra for an Au/CdTe Schottky diode based on the continuity equation and incorporating the surface recombination losses does not explain the measured spectra in the entire range of wavelengths, particularly the abovementioned decay in the short-wavelength region. The satisfactory description of the measured spectra is achieved by proposing a model, in which the surface recombination along with the Schottky effect resulted in the presence of a dead layer in the space-charge region is taken into account. By varying the parameters such as uncompensated carrier concentration and carrier lifetime, the above model can explain the actual photoresponse spectra.

2007-01-01T00:00:00Z Dolgolenko, A.P. Varentsov, M.D. Gaidar, G.P. Litovchenko, P.G. http://dspace.nbuv.gov.ua:80/handle/123456789/118342 2017-05-30T00:04:20Z 2007-01-01T00:00:00Z

Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons Dolgolenko, A.P.; Varentsov, M.D.; Gaidar, G.P.; Litovchenko, P.G. We have studied the high-resistance samples of p-Si (р00 = (3.3 ± 0.5) × × 10¹² cm⁻³ ) and n-Si (n₀ = (2.0 ± 0.3) × 10¹² cm⁻³ ) grown by the floating-zone technique after the irradiation by fast-pile neutrons at 287 К. The dose and the temperature dependences of the effective concentration of carriers have been measured. The calculation has been carried out in the framework of Gossick's corrected model. It is shown that the radiation hardness of n- and p-Si, on the one hand, is defined by clusters, and, on the other hand, by vacancy defects (acceptors) in n-Si and by interstitial defects (donors and acceptors) in p-Si. We have determined that, during the irradiation of p-Si by small doses of neutrons, the change of a charge state of interstitial defects leads to the annealing of these defects and to a decrease of their introduction rate.

2007-01-01T00:00:00Z