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<title>Semicond. Physics Quantum Electronics &amp; Optoelectronics, 2008, № 4</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/114585" rel="alternate"/>
<subtitle/>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/114585</id>
<updated>2026-04-06T22:40:06Z</updated>
<dc:date>2026-04-06T22:40:06Z</dc:date>
<entry>
<title>Author Index 2008</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/119374" rel="alternate"/>
<author>
<name/>
</author>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/119374</id>
<updated>2017-06-07T00:03:41Z</updated>
<published>2008-01-01T00:00:00Z</published>
<summary type="text">Author Index 2008
</summary>
<dc:date>2008-01-01T00:00:00Z</dc:date>
</entry>
<entry>
<title>Optical properties of diamond-like carbon films subjected to ultraviolet irradiation</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/119082" rel="alternate"/>
<author>
<name>Klyui, N.I.</name>
</author>
<author>
<name>Litovchenko, V.G.</name>
</author>
<author>
<name>Lukyanov, A.N.</name>
</author>
<author>
<name>Klyui, A.N.</name>
</author>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/119082</id>
<updated>2017-06-04T00:04:17Z</updated>
<published>2008-01-01T00:00:00Z</published>
<summary type="text">Optical properties of diamond-like carbon films subjected to ultraviolet irradiation
Klyui, N.I.; Litovchenko, V.G.; Lukyanov, A.N.; Klyui, A.N.
Influence of UV irradiation on optical properties of the nitrogen doped&#13;
diamond-like carbon (DLC) films was studied. Transparency spectra of the initial, UV&#13;
irradiated and concentrated UV irradiated films were measured. Dependences of the&#13;
optical bandgap on the nitrogen content were obtained from these spectra. Raman&#13;
measurements revealed a decrease in the graphitic cluster size by two times after UV&#13;
irradiation. It was shown that concentrated UV irradiation leads to smaller changes in&#13;
comparison with nonconcentrated UV. Physical mechanism of air oxygen embedding&#13;
into the DLC structure under UV irradiation is proposed to explain the changes in the&#13;
properties of the films.
</summary>
<dc:date>2008-01-01T00:00:00Z</dc:date>
</entry>
<entry>
<title>Ordered Carbon Nanotubes and Globular Opals As a Model of Multiscaling Photonic Crystals</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/119081" rel="alternate"/>
<author>
<name>Dovbeshko, G.</name>
</author>
<author>
<name>Fesenko, O.</name>
</author>
<author>
<name>Moiseyenko, V.</name>
</author>
<author>
<name>Gorelik, V.</name>
</author>
<author>
<name>Boyko, V.</name>
</author>
<author>
<name>Sobolev, V.</name>
</author>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/119081</id>
<updated>2017-06-04T00:04:15Z</updated>
<published>2008-01-01T00:00:00Z</published>
<summary type="text">Ordered Carbon Nanotubes and Globular Opals As a Model of Multiscaling Photonic Crystals
Dovbeshko, G.; Fesenko, O.; Moiseyenko, V.; Gorelik, V.; Boyko, V.; Sobolev, V.
Experimental data on carbon nanotube carpet and synthetic opals have been&#13;
compared by visible, infrared spectroscopy, and electron microscopy. Spectral features of&#13;
the objects under study in infrared region are registered. Three regions of abnormal&#13;
behavior of reflectance and absorbance for carbon nanotube carpet and two regions for&#13;
opals in the 7000-2000 cm⁻¹ are observed in comparison with the separated nanotubes or&#13;
SiO₂ globules in disordered states and/or condensed state. The spectroscopic features of&#13;
the photonic crystals caused by their different microstructures at different length scales&#13;
and basis for development of a proper model for light propagation through the photonic&#13;
crystals in the IR region are presented for discussion.
</summary>
<dc:date>2008-01-01T00:00:00Z</dc:date>
</entry>
<entry>
<title>The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/119080" rel="alternate"/>
<author>
<name>Solntsev, V.S.</name>
</author>
<author>
<name>Gorbanyuk, T.I.</name>
</author>
<author>
<name>Litovchenko, V.G.</name>
</author>
<author>
<name>Evtukh, A.A.</name>
</author>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/119080</id>
<updated>2017-06-04T00:04:13Z</updated>
<published>2008-01-01T00:00:00Z</published>
<summary type="text">The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers
Solntsev, V.S.; Gorbanyuk, T.I.; Litovchenko, V.G.; Evtukh, A.A.
The adsorboelectric effect arising in multilayered semiconductor structures&#13;
based on the porous Si with catalytically active Pd electrodes due to action of low&#13;
concentrations of hydrogen containing gases (Н₂, H₂S) at the room temperature is&#13;
studied. The kinetic dependences of the change in output signals of the samples upon&#13;
action of different concentrations of gas molecules are studied using the capacitancevoltage&#13;
characteristic method. The isotherms of adsorption are derived. A physical model&#13;
of the adsorption of hydrogen containing gases in these structures is proposed to explain&#13;
the observed phenomena.
</summary>
<dc:date>2008-01-01T00:00:00Z</dc:date>
</entry>
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