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<title>Semicond. Physics Quantum Electronics &amp; Optoelectronics, 2008, № 3</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/114584" rel="alternate"/>
<subtitle/>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/114584</id>
<updated>2026-04-05T23:54:36Z</updated>
<dc:date>2026-04-05T23:54:36Z</dc:date>
<entry>
<title>Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/119060" rel="alternate"/>
<author>
<name>Osinniy, V.</name>
</author>
<author>
<name>Dybko, K.</name>
</author>
<author>
<name>Jedrzejczak, A.</name>
</author>
<author>
<name>Arciszewska, M.</name>
</author>
<author>
<name>Dobrowolski, W.</name>
</author>
<author>
<name>Story, T.</name>
</author>
<author>
<name>Radchenko, M.V.</name>
</author>
<author>
<name>Sichkovskiy, V.I.</name>
</author>
<author>
<name>Lashkarev, G.V.</name>
</author>
<author>
<name>Olsthoorn, S.M.</name>
</author>
<author>
<name>Sadowski, J.</name>
</author>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/119060</id>
<updated>2017-06-04T00:02:32Z</updated>
<published>2008-01-01T00:00:00Z</published>
<summary type="text">Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
Osinniy, V.; Dybko, K.; Jedrzejczak, A.; Arciszewska, M.; Dobrowolski, W.; Story, T.; Radchenko, M.V.; Sichkovskiy, V.I.; Lashkarev, G.V.; Olsthoorn, S.M.; Sadowski, J.
Thermoelectric power, electrical conductivity, and high field Hall effect were&#13;
studied over a broad temperature range in ferromagnetic Ga₁₋xMnxAs epitaxial layers&#13;
(0.015 ≤ x ≤ 0.06). Thermoelectric power analysis gives information about carrier&#13;
transport mechanisms in layers with both metallic and non-metallic types of conductivity&#13;
and allows determination of the Fermi energy and carrier concentration. At high&#13;
temperatures (T &gt; 70 K), the thermoelectric power in GaMnAs linearly increases&#13;
with increasing temperature. That indicates the presence of a degenerate hole gas&#13;
with the Fermi energy EF = 220 ± 25 meV, nearly independent of Mn content (for&#13;
0.02 ≤ x ≤ 0.05). At lower temperatures, GaMnAs layers with metallic-type conductivity&#13;
show an additional contribution to the thermoelectric power with the maximum close to&#13;
the Curie temperature.
</summary>
<dc:date>2008-01-01T00:00:00Z</dc:date>
</entry>
<entry>
<title>Investigations of surface morphology and chemical composition of Ag/ZnS/glassceramic thin-film structure</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/119059" rel="alternate"/>
<author>
<name>Kurbatov, D.</name>
</author>
<author>
<name>Opanasyuk, A.</name>
</author>
<author>
<name>Denisenko, V.</name>
</author>
<author>
<name>Kramchenkov, A.</name>
</author>
<author>
<name>Zaharets, M.</name>
</author>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/119059</id>
<updated>2017-06-04T00:03:37Z</updated>
<published>2008-01-01T00:00:00Z</published>
<summary type="text">Investigations of surface morphology and chemical composition of Ag/ZnS/glassceramic thin-film structure
Kurbatov, D.; Opanasyuk, A.; Denisenko, V.; Kramchenkov, A.; Zaharets, M.
The surface morphology and chemical composition of Ag/ZnS/glassceramic&#13;
thin-film system obtained by close-spaced vacuum sublimation technique under different&#13;
grow conditions were investigated. Examination of surface profile and morphology was&#13;
performed by scanning electron and optical microscopy. Chemical composition was&#13;
studied by Rutherford back scattering method. Results of morphology studies enabled to&#13;
determine dependence of the growth mechanism, roughness Ra, grain size D of ZnS&#13;
layers on the growth conditions. The researches of chemical composition allowed to&#13;
determine the concentration of compound elements and impurities, deviation from&#13;
stoichiometry and thickness distribution of chemical elements.
</summary>
<dc:date>2008-01-01T00:00:00Z</dc:date>
</entry>
<entry>
<title>Development of a KDP crystal growth system based on TRM and characterization of the grown crystals</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/119058" rel="alternate"/>
<author>
<name>Javidi, S.</name>
</author>
<author>
<name>Faripour, H.</name>
</author>
<author>
<name>Esmaeil Nia, M.</name>
</author>
<author>
<name>Sepehri, K.F.</name>
</author>
<author>
<name>Ali Akbari, N.</name>
</author>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/119058</id>
<updated>2017-06-04T00:03:37Z</updated>
<published>2008-01-01T00:00:00Z</published>
<summary type="text">Development of a KDP crystal growth system based on TRM and characterization of the grown crystals
Javidi, S.; Faripour, H.; Esmaeil Nia, M.; Sepehri, K.F.; Ali Akbari, N.
A solution growth system has been built based on temperature reduction&#13;
method [1]. A few KDP crystals were grown by the system up to 160×40×38 mm&#13;
dimensions. Spectrophotometer transmission spectra from (100) planes of the grown&#13;
crystals show about 86 % transmission in the visible region. XRD analysis, laser damage&#13;
threshold, and microhardness of the crystals were determined. The etching behavior of&#13;
surface features of grown KDP single crystals was studied in different etchants.
</summary>
<dc:date>2008-01-01T00:00:00Z</dc:date>
</entry>
<entry>
<title>Optical-electronic sensor of spacecraft heat protection ablation</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/119057" rel="alternate"/>
<author>
<name>Hornostaev, G.</name>
</author>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/119057</id>
<updated>2017-06-04T00:03:22Z</updated>
<published>2008-01-01T00:00:00Z</published>
<summary type="text">Optical-electronic sensor of spacecraft heat protection ablation
Hornostaev, G.
Block diagram and results of tests on gas-dynamic stands are represented to&#13;
illustrate operation of the continuous ablation sensor, in which color light guides with a&#13;
diameter of 1 mm are used. It is shown that the application of compensating light filter in&#13;
the colorless channel makes it possible to create the meter invariant to external radiant&#13;
fluxes applied to the heat protection covering surface.
</summary>
<dc:date>2008-01-01T00:00:00Z</dc:date>
</entry>
</feed>
