http://dspace.nbuv.gov.ua:80/handle/123456789/114580 2026-04-12T18:35:37Z 2026-04-12T18:35:37Z http://dspace.nbuv.gov.ua:80/handle/123456789/119245 2017-06-06T00:03:49Z 2009-01-01T00:00:00Z

Author Index 2009

2009-01-01T00:00:00Z Emad Hameed Hussein http://dspace.nbuv.gov.ua:80/handle/123456789/118849 2017-06-01T00:05:28Z 2009-01-01T00:00:00Z

Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width Emad Hameed Hussein The relationship between response speed of a silicon n-well/p substrate photodiode and the depletion layer width has been investigated. Variation of both the junction capacitance and the series resistance of the photodiode with the depletion layer width have been analyzed. It is shown that the contribution of the time constant and the drift time in the rise time within the depletion layer can be decreased to an optimal value (less than 1ns) just for specific value of the depletion layer width and smaller value of the diffused junction area.

2009-01-01T00:00:00Z Mihir M. Vora Aditya M. Vora http://dspace.nbuv.gov.ua:80/handle/123456789/118848 2017-06-01T00:05:28Z 2009-01-01T00:00:00Z

Stacking Faults in the single crystals Mihir M. Vora; Aditya M. Vora The single crystals of InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ viz. MoRe₀.₀₅Se₁.₉₉₅, MoRe₀.₀₀₁Se₁.₉₉₉ and Mo₀.₉₉₅Re₀.₀₀₅Se₂ have been grown by a direct vapour transport technique (DVT) in the laboratory. Structural characterization of these crystals was made using the XRD method. The particle size for a number of reflections has been calculated using the Scherrer formula. There are considerable variations appearing in deformation (α) and growth (β) fault probabilities in InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ single crystals due to their off-stoichiometry, which possesses the stacking fault in the single crystal.

2009-01-01T00:00:00Z Zaabat, M. Draid, M. http://dspace.nbuv.gov.ua:80/handle/123456789/118847 2017-06-01T00:06:26Z 2009-01-01T00:00:00Z

Two-dimensional modeling the static parameters for a submicron field-effect transistor Zaabat, M.; Draid, M. A comparison of two different models for simulation of submicron GaAs MESFETs static characteristics has been made. A new two-dimensional numerical model is presented to investigate the submicron field-effect transistor characteristics, the influence of the geometry of the component, like the inter-electrode distance, on the capacities. All simulation revealed the existence of a high contact electric field near the gate, which creates a depopulated zone around the gate, but the preceding studies have neglected the edge effects, which are very significant for the submicron MESFETs.

2009-01-01T00:00:00Z