Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 4 http://dspace.nbuv.gov.ua:80/handle/123456789/114539 2026-04-06T10:22:49Z 2026-04-06T10:22:49Z Author Index 2010 http://dspace.nbuv.gov.ua:80/handle/123456789/119248 2017-06-06T00:02:37Z 2010-01-01T00:00:00Z Author Index 2010 2010-01-01T00:00:00Z Nonlinear stochastic relaxation dynamics in spin-crossover solid-state compounds Gudyma, Iu.V. Maksymov, A.Iu. http://dspace.nbuv.gov.ua:80/handle/123456789/118740 2017-06-01T00:04:41Z 2010-01-01T00:00:00Z Nonlinear stochastic relaxation dynamics in spin-crossover solid-state compounds Gudyma, Iu.V.; Maksymov, A.Iu. A study of dynamic of spin-crossover solid-state compound has been carried out. The investigated macroscopic phenomenological model for molecular spin-crossover complexes with optical control parameter has been extended to the case of noise action. The noise-driven phase transition was observed. Also, ascertained was the role of additive noise as a main factor for suppressing the potential barrier height. 2010-01-01T00:00:00Z Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure Gorley, P.M. Grushka, Z.M. Grushka, O.G. Gorley, P.P. Zabolotsky, I.I. http://dspace.nbuv.gov.ua:80/handle/123456789/118739 2017-06-01T00:05:36Z 2010-01-01T00:00:00Z Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure Gorley, P.M.; Grushka, Z.M.; Grushka, O.G.; Gorley, P.P.; Zabolotsky, I.I. Using the method of deposition over the optical contact, the authors created nSnS2/n-CdIn₂Te₄ heterojunction and investigated temperature evolution of its currentvoltage characteristics under the forward bias U ≤ 3 V. Analyzing temperature dependence of the curves obtained, the main mechanisms of current transport through the semiconductor contact were determined, allowing prediction of successful possible applications of the heterojunction studied under high temperatures and elevated radiation due to the parameters of the base semiconductors and the diode structure itself. 2010-01-01T00:00:00Z Thermal simulation of heterogeneous structural components in microelectronic devices Gavrysh, V.I. Fedasyuk, D.V. http://dspace.nbuv.gov.ua:80/handle/123456789/118738 2017-06-01T00:04:45Z 2010-01-01T00:00:00Z Thermal simulation of heterogeneous structural components in microelectronic devices Gavrysh, V.I.; Fedasyuk, D.V. The steady state nonlinear problem of thermal conduction for isotropic strip with foreign rectangular inclusion that heats as an internal thermal source with heat dissipation has been considered. The methodology to solve this problem and its application for the specific dependence of the thermal-conductivity coefficients on temperature has been offered. 2010-01-01T00:00:00Z