http://dspace.nbuv.gov.ua:80/handle/123456789/114536 2026-04-06T12:01:04Z 2026-04-06T12:01:04Z Lysiuk, V.O. Moskalenko, N.L. Staschuk, V.S. Kluy, M.I. Vakulenko, O.V. Androsyuk, I.G. Surmach, M.A. Pogoda, V.I. http://dspace.nbuv.gov.ua:80/handle/123456789/117822 2017-05-27T00:06:26Z 2010-01-01T00:00:00Z

Formation of blisters in thin metal films on lithium niobate implanted by keV Ar⁺ ions Lysiuk, V.O.; Moskalenko, N.L.; Staschuk, V.S.; Kluy, M.I.; Vakulenko, O.V.; Androsyuk, I.G.; Surmach, M.A.; Pogoda, V.I. Bubble-like and crater-like blisters were observed at the boundaries of the structures “thin Ni film–lithium niobate” and “thin Pd film–lithium tantalate” implanted by Ar⁺ ions. Analyses of these systems by AFM and SEM have shown that ion implantation essentially modifies near-surface structures with changing their optical, electrical and mechanical properties. Differences in the optical properties and surface structure between implanted and non-implanted systems are observed and explained by different properties of materials, widening interface “film–substrate” as well as by other known effects and phenomena. Enhanced adhesion of these films to substrate, nonselective spectral response is a base for effective and perspective application of the systems in development of high-sensitive pyroelectric detectors with a wide spectral range and high optical damage threshold.

2010-01-01T00:00:00Z Borovytsky, V. http://dspace.nbuv.gov.ua:80/handle/123456789/117809 2017-05-27T00:06:23Z 2010-01-01T00:00:00Z

Two-dimensional digital demodulation for optical microscopes with spatial modulation of illumination Borovytsky, V. It is proposed the new technique for the digital demodulation of images with two-dimensional spatial modulation of illumination. This technique is applicable for low contrast modulation with any phases of modulation that are different. Efficiency of the technique is demonstrated using images of test-objects formed by an optical microscope with and without spatial modulation of illumination.

2010-01-01T00:00:00Z Tretyak, O.V. Kozonushchenko, O.I. Krivokhizha, K.V. Revenko, A.S. http://dspace.nbuv.gov.ua:80/handle/123456789/117808 2017-05-27T00:06:25Z 2010-01-01T00:00:00Z

Spin-dependent current in silicon p-n junction diodes Tretyak, O.V.; Kozonushchenko, O.I.; Krivokhizha, K.V.; Revenko, A.S. We have used electrically detected spin-dependent paramagnetic resonance to investigate the non-equilibrium conductivity in a silicon diode. In order to create paramagnetic centers, we used diode with a polished surface (that includes p-n junction). The dependence of relative changes in the amplitude of a signal under resonance conditions and the total value of current through the diode were investigated. We have found the presence of inversion channel on the surface of p-n junction and proposed the model of the influence of spin resonance on the channel conductivity. The upper value of the time constant inherent to the spin-dependent process was determined as approximately 10⁻⁶ s . The influence of the spin-dependent process on the charge state in inversion channel has been discussed.

2010-01-01T00:00:00Z Ilashchuk, М.I. Parfenyuk, O.A. Ulyanytskiy, K.S. Brus, V.V. Vakhnyak, N.D. http://dspace.nbuv.gov.ua:80/handle/123456789/117807 2017-05-27T00:06:24Z 2010-01-01T00:00:00Z

Influence of Cr doping on optical and photoluminescent properties of CdTe Ilashchuk, М.I.; Parfenyuk, O.A.; Ulyanytskiy, K.S.; Brus, V.V.; Vakhnyak, N.D. Spectra of transmission and low-temperature photoluminescence of CdTe:Cr crystals have been investigated for concentrations of the doping impurity (Cr) from 1∙10¹⁷ to 4∙10¹⁹ cm⁻³ in the melt. We have found additional absorption bands with maxima at λ₁ = 1.9 μm and λ2 = 7.0 μm induced by the presence of this dopant. An additional band of radiative recombination in the vicinity of 1.22 eV is caused by electron transitions from the conduction band to the deep donor levels Ev+(0.36-0.38) eV, which correspond to the Cr¹⁺ defect entering to clusters. We have also observed the shift of CdTe:Cr absorption edge to the longwave region. This shift is caused by strong lattice deformation near the Cr²⁺ impurity position due to the static Jahn-Teller effect.

2010-01-01T00:00:00Z