http://dspace.nbuv.gov.ua:80/handle/123456789/114484 2026-04-04T13:38:54Z 2026-04-04T13:38:54Z Lozovski, V. Lysenko, V. Pyatnitsia, V. Spivak, M. http://dspace.nbuv.gov.ua:80/handle/123456789/117802 2017-05-27T00:04:39Z 2011-01-01T00:00:00Z

Can nanoparticles be useful for antiviral therapy? Lozovski, V.; Lysenko, V.; Pyatnitsia, V.; Spivak, M. In this paper, optical properties of the system consisting of mesoparticles (small dielectric particles) and nanoparticles (quantum dots) of various shapes have been considered. This system can be characterized by resonant absorption of electromagnetic waves and used for developing the new approach to antiviral therapy.

2011-01-01T00:00:00Z Ignatyeva, Т.А. http://dspace.nbuv.gov.ua:80/handle/123456789/117801 2017-05-27T00:04:23Z 2011-01-01T00:00:00Z

Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities Ignatyeva, Т.А. The investigation shows that the specific conductivity of Mo sharply decreases exponentially under the temperature influence within the range from ~20 to ~60 K or under the Re impurity influence in the concentration range up to 3  4 at.% and then transforms into the power dependence. Noted there are two singularities in the Mo specific conductivity, namely, an exponential conductivity change within the small energy range and the presence of a threshold energy value equivalent to ~50 K, which can be related to the mobility edge for localized electron states at the spectrum edge in the vicinity of the critical energy C1 (arising of a small-size electron lens). The identity in the behavior of Mo specific conductivity change, independently on the external parameter influencing on the Fermi level position relatively to the critical points of the electron spectrum, is shown. This fact permits to assume that the singularities under consideration can be related to the partial dielectric behavior of the electron spectrum, depending on the Fermi level position relatively to the critical energies

2011-01-01T00:00:00Z Gavrysh, V.I. http://dspace.nbuv.gov.ua:80/handle/123456789/117800 2017-05-27T00:05:16Z 2011-01-01T00:00:00Z

Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices Gavrysh, V.I. The steady-state linear thermal conductivity problem for an isotropic layer with a thin foreign parallelepipedic inclusion that releases heat has been considered with account of heat dissipation. The methodology for analytic solution of three-dimensional steady-state boundary thermal conductivity problem has been suggested.

2011-01-01T00:00:00Z Vladimirova, T.P. Kyslovs’kyy, Ye.M. Molodkin, V.B. Olikhovskii, S.I. Koplak, O.V. Kochelab, E.V. http://dspace.nbuv.gov.ua:80/handle/123456789/117799 2017-05-27T00:04:40Z 2011-01-01T00:00:00Z

Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field Vladimirova, T.P.; Kyslovs’kyy, Ye.M.; Molodkin, V.B.; Olikhovskii, S.I.; Koplak, O.V.; Kochelab, E.V. Quantitative characterization of complex microdefect structures in annealed silicon crystals (1150 °С, 40 h) and their transformations after exposing for one day in a weak magnetic field (1 T) has been performed by analyzing the rocking curves, which have been measured by a high-resolution double-crystal X-ray diffractometer. Based on the characterization results, which have been obtained by using the formulas of the dynamical theory of X-ray diffraction by imperfect crystals with randomly distributed microdefects of several types, the concentrations and average sizes of oxygen precipitates and dislocation loops after imposing the magnetic field and their dependences on time after its removing have been determined.

2011-01-01T00:00:00Z