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<title>Semicond. Physics Quantum Electronics &amp; Optoelectronics, 2014, № 2</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/114472" rel="alternate"/>
<subtitle/>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/114472</id>
<updated>2026-04-06T10:18:27Z</updated>
<dc:date>2026-04-06T10:18:27Z</dc:date>
<entry>
<title>Hybrid-integrated version of solid-state components for terahertz frequency region</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/118387" rel="alternate"/>
<author>
<name>Zorenko, O.V.</name>
</author>
<author>
<name>Bychok, A.V.</name>
</author>
<author>
<name>Kryts’ka, T.V.</name>
</author>
<author>
<name>Kudryk, Ya.Ya.</name>
</author>
<author>
<name>Shynkarenko, V.V.</name>
</author>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/118387</id>
<updated>2017-05-31T00:06:07Z</updated>
<published>2014-01-01T00:00:00Z</published>
<summary type="text">Hybrid-integrated version of solid-state components for terahertz frequency region
Zorenko, O.V.; Bychok, A.V.; Kryts’ka, T.V.; Kudryk, Ya.Ya.; Shynkarenko, V.V.
We present the results of development of key components for THz devices&#13;
obtained using mathematical modeling of detector sections, radiation source and&#13;
subharmonic mixers. Schottky barrier diodes with different parameters served as&#13;
nonlinear elements of the above facilities.
</summary>
<dc:date>2014-01-01T00:00:00Z</dc:date>
</entry>
<entry>
<title>Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/118376" rel="alternate"/>
<author>
<name>Melezhik, E.O.</name>
</author>
<author>
<name>Gumenjuk-Sichevska, J.V.</name>
</author>
<author>
<name>Dvoretskii, S.A.</name>
</author>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/118376</id>
<updated>2017-05-31T00:07:20Z</updated>
<published>2014-01-01T00:00:00Z</published>
<summary type="text">Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition
Melezhik, E.O.; Gumenjuk-Sichevska, J.V.; Dvoretskii, S.A.
The band structure and dependences of the intrinsic concentration in the&#13;
mercury-cadmium-telluride (MCT) Hg₀.₃₂Cd₀.₆₈Te/Hg₀ Cd₀ Te/Hg₀.₃₂Cd₀.₆₈Te quantum&#13;
wells in the framework of the 8x8 k.p envelope function method on the well width L and&#13;
composition x were calculated. Modeling of the energy spectra showed that the intrinsic&#13;
concentration can vary about an order of magnitude with variation of the well width and&#13;
chemical composition in the range of x &lt; 0.16 and well width L &lt; 20 nm at the liquid&#13;
nitrogen temperature. These strong variations of the carrier concentration are caused by&#13;
the insulator-semimetal topological transition.
</summary>
<dc:date>2014-01-01T00:00:00Z</dc:date>
</entry>
<entry>
<title>Modification of optical properties and structure of thin films for enhancing absorption</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/118375" rel="alternate"/>
<author>
<name>Lysiuk, V.O.</name>
</author>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/118375</id>
<updated>2017-05-31T00:05:54Z</updated>
<published>2014-01-01T00:00:00Z</published>
<summary type="text">Modification of optical properties and structure of thin films for enhancing absorption
Lysiuk, V.O.
The most used methods such as ion implantation, laser irradiation and&#13;
nanosphere lithography for modification and creation of special microrelief of thin&#13;
absorbing films on photosensitive substrates have been described. Controlled&#13;
modification of surface structure of the samples for improving their optical properties,&#13;
especially for enhancing absorption, has many applications in optical devices. The basic&#13;
things were analyzed from selection of film materials and ways for their further&#13;
processing to shapes and dimensions of the obtained surface structures. Theoretical&#13;
modeling methods based on the Mie theory and statistical temporal mode-coupled theory&#13;
have been used to explain the influence of surface microrelief on optical properties of the&#13;
samples. Advantages and perspectives for application of the methods have been&#13;
described and analyzed.
</summary>
<dc:date>2014-01-01T00:00:00Z</dc:date>
</entry>
<entry>
<title>Generation and enhancement of SRS sub-nanosecond pulses in self-focusing organic substances</title>
<link href="http://dspace.nbuv.gov.ua:80/handle/123456789/118374" rel="alternate"/>
<author>
<name>Isaenko, O.Iu.</name>
</author>
<author>
<name>Ivanisik, A.I.</name>
</author>
<author>
<name>Korotkov, P.A.</name>
</author>
<author>
<name>Ponezha, G.V.</name>
</author>
<id>http://dspace.nbuv.gov.ua:80/handle/123456789/118374</id>
<updated>2017-05-31T00:07:19Z</updated>
<published>2014-01-01T00:00:00Z</published>
<summary type="text">Generation and enhancement of SRS sub-nanosecond pulses in self-focusing organic substances
Isaenko, O.Iu.; Ivanisik, A.I.; Korotkov, P.A.; Ponezha, G.V.
The possibility to use self-focusing organic substances in order to create&#13;
highly efficient transformers of laser radiation based on stimulated Raman scattering has&#13;
been researched. The proposed and implemented optical schemes are suitable for&#13;
generation of seed sub-nanosecond Stokes pulses, due to dynamics of self-focusing, and&#13;
the compression of giant pulses of multimode laser with high (&gt;20) increase in the&#13;
intensity at a shifted frequency
</summary>
<dc:date>2014-01-01T00:00:00Z</dc:date>
</entry>
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