http://dspace.nbuv.gov.ua:80/handle/123456789/114471 2026-04-16T21:00:39Z 2026-04-16T21:00:39Z http://dspace.nbuv.gov.ua:80/handle/123456789/119221 2017-06-06T00:02:45Z 2014-01-01T00:00:00Z

Publication Ethics and Publication Malpractice Statement All editors, reviewers and authors, should be familiarized and take into account the Publication Ethics and Publication Malpractice Statement of the international journal “Semiconductor Physics, Quantum Electronics and Optoelectronics”. This statement is based on the COPE Code of Conduct for Journal Editors.

2014-01-01T00:00:00Z Zhulay, D.S. Fedorenko, D.V. Koval’chuk, A.V. Bugaychuk, S.A. Klimusheva, G.V. Mirnaya, T.A. http://dspace.nbuv.gov.ua:80/handle/123456789/118362 2017-05-31T00:04:59Z 2014-01-01T00:00:00Z

Electro-conductive properties of cadmium octanoate composites with CdS nanoparticles Zhulay, D.S.; Fedorenko, D.V.; Koval’chuk, A.V.; Bugaychuk, S.A.; Klimusheva, G.V.; Mirnaya, T.A. Electrical properties of mesogenic cadmium octanoate composites containing CdS nanoparticles (NPs) have been studied for the first time. Semiconductor CdS spherical NPs (sizes of 2.5 nm) were chemically synthesized in the thermotropic ionic liquid crystalline phase (smectic A) of cadmium octanoate that was used as nanoreactor. We compared the electrical properties of both clean matrix and nanocomposite to clarify the role of semiconductor CdS NPs with different concentrations. We have investigated electrical characteristics at different temperatures, which correspond to the different phases of the composites. The conductivity of nanocomposites has an activation nature both in anisotropic glassy and smectic A phase. The conductivity of the nanocomposite along the cation-anion layers is by two orders of magnitude higher than that across the cation-anion layers, which confirms anisotropy of the nanocomposite regardless of the phase of material. In the glassy phase, the electronic type conductivity is observed. Increasing the nanoparticles concentration brings additional free charge carriers or increases their mobility. For the smectic A phase, increasing the CdS NPs concentration brings additional traps for the carriers that travel in plane of the cation-anion layers. On the other hand, the nanoparticles deform the cation-anion layers and increase the mobility of carriers across the layers.

2014-01-01T00:00:00Z Kossko, I.A. Denisov, A.Ye. http://dspace.nbuv.gov.ua:80/handle/123456789/118361 2017-05-31T00:04:44Z 2014-01-01T00:00:00Z

Features of Auger-emission in channeling Kossko, I.A.; Denisov, A.Ye. Shown in this paper is the influence of channeling effect on formation of the signal for low- and high-energy Auger-electrons observed in monocrystalline silicon. It has been ascertained the anisotropic (wave-like) character of the yield value for lowenergy Auger-electrons in silicon, when changing the angle of acting initial radiation during sample rotation.

2014-01-01T00:00:00Z Melezhik, Ye.O. Gumenjuk-Sichevska, J.V. Sizov, F.F. http://dspace.nbuv.gov.ua:80/handle/123456789/118360 2017-05-31T00:05:01Z 2014-01-01T00:00:00Z

Electron relaxation and mobility in the inverted band quantum well CdTe/Hg₁₋xCdxTe/CdTe Melezhik, Ye.O.; Gumenjuk-Sichevska, J.V.; Sizov, F.F. Electron relaxation processes at nitrogen temperatures in CdTe/Hg₁₋xCdxTe/CdTe quantum well (QW) with an inverted band structure is modelled. In this structure, scattering by longitudinal optical phonons, charged impurities, acoustic phonons and interfaces were taken into account. It was found that for undoped and lightly doped QWs (concentration of background n-type charged impurities in the well is 10¹⁴ – 10¹⁶ cm-³ or less), for x close to the band inversion value 0.16, the electron mobility grows considerably when the QW width decreases. This mobility is higher for samples with smaller concentrations of charged impurities.

2014-01-01T00:00:00Z