http://dspace.nbuv.gov.ua:80/handle/123456789/114446 2026-04-23T03:23:44Z 2026-04-23T03:23:44Z Shapovalov, A.P. Korotash, I.V. Rudenko, E.M. Sizov, F.F. Dubyna, D.S. Osipov, L.S. Polotskiy, D.Yu. Tsybrii, Z.F. Korchovyi, A.A. http://dspace.nbuv.gov.ua:80/handle/123456789/121821 2017-06-19T00:03:24Z 2015-01-01T00:00:00Z

Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique Shapovalov, A.P.; Korotash, I.V.; Rudenko, E.M.; Sizov, F.F.; Dubyna, D.S.; Osipov, L.S.; Polotskiy, D.Yu.; Tsybrii, Z.F.; Korchovyi, A.A. Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF plasma of helicon discharge allowed us to deposit AlN coatings on thermolabile substrates, significantly increasing the deposition rate. A study of spectral properties of AlN films (reflection and transmission spectra within the range 2…25 µm) has been carried out by using the infrared Fourier spectrometer Spectrum BX-II. It has been shown that the obtained composite structures (AlN coatings on teflon and mylar substrates) could be used as passive filters in the infrared spectral range.

2015-01-01T00:00:00Z Bacherikov, Yu.Yu. Zhuk, A.G. Okhrimenko, O.B. Kardashov, D.L. Kozitskiy, S.V. Kidalov, V.V. http://dspace.nbuv.gov.ua:80/handle/123456789/121820 2017-06-19T00:03:20Z 2015-01-01T00:00:00Z

Effect of heating rate on oxidation process of fine-dispersed ZnS:Mn obtained by SHS Bacherikov, Yu.Yu.; Zhuk, A.G.; Okhrimenko, O.B.; Kardashov, D.L.; Kozitskiy, S.V.; Kidalov, V.V. The influence of annealing at 350 °C in air atmosphere on the luminescent characteristics of powdered ZnS: Mn obtained by self-propagating high-temperature synthesis has been studied. It was shown that variation in material heating rate due to changes in the annealing temperature results in different behavior of oxidative processes. It has been ascertained that the slow heating of powdered ZnS:Mn, compared with the rapid one in the presence of oxygen, promotes active oxidation of ZnS and formation of Frenkel pairs, increases mileage of defects acting as sensitizers, and their localization near Mn²⁺. The model which explains the observed changes in the luminescence and PLE spectra has been presented.

2015-01-01T00:00:00Z Nasyrov, M.U. Ataubaeva, A.B. http://dspace.nbuv.gov.ua:80/handle/123456789/121819 2017-06-19T00:03:18Z 2015-01-01T00:00:00Z

Radiation-stimulated processes in silicon structures with contacts based on TiN Nasyrov, M.U.; Ataubaeva, A.B. The influence of irradiation on the structural properties of titanium nitride films deposited on silicon wafers has been considered. It has been shown that depending on the energy, fluence and type of irradiation ion, observed are the increase of accumulated damages with decreasing the grain size, the grain size reduction with increasing the fluence, the increase of dislocation density and microstrains.

2015-01-01T00:00:00Z Khmil, D.N. Kamuz, A.M. Oleksenko, P.F. Kamuz, V.G. Aleksenko, N.G. Kamuz, O.A. http://dspace.nbuv.gov.ua:80/handle/123456789/121818 2017-06-19T00:03:13Z 2015-01-01T00:00:00Z

Method for determination of the absorption coefficient in films based on photoluminophore suspension for white LEDs Khmil, D.N.; Kamuz, A.M.; Oleksenko, P.F.; Kamuz, V.G.; Aleksenko, N.G.; Kamuz, O.A. Developed in this work is the method for measuring the absorption coefficient in optically non-homogeneous media (films prepared from photoluminophore suspension). Using this new method, the authors have measured the absorption spectrum of the above films with inorganic photoluminophore FLY-7. At the film absorption peak (near 448 nm) and photoluminophore concentration close to 20%, the absorption coefficient reaches 124 cm⁻¹. Ascertained have been the conditions that should be provided when using this method.

2015-01-01T00:00:00Z