Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals
Репозиторій DSpace/Manakin
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The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals
Інші назви:
Вплив високоенергетичного опромінювання на електрчні і дисипативні властивості монокристалів кремнію
Посилання:
The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals / N.M. Pelikhaty, N.Ya. Rokhmanov, V.V. Onischnko // Functional Materials. — 2006. — Т. 13, № 4. — С. 613-617. — Бібліогр.: 9 назв. — англ.
Дата:
2006
Переглядів:
556
Завантажень:
244
Анотація:
Behavior of internal friction δ and electric resistance in silicon single crystals with low dislocation density (10-100 cm⁻²) has been studied during of bombardment with α-particles. Effect of strengthening has been found as well as change of direct hysteresis into reverse one in amplitude dependence of internal friction at increasing α-irradiation dose rate. The fact is explained by blocking of charged dislocations by radiation-induced vacancies and areas of charge separetion formed due to secondary infrared irration.
