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Characterization of quaternary chalcogenide As-Ge-Te-Si thin films
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 3
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Characterization of quaternary chalcogenide As-Ge-Te-Si thin films
Інший ID:
PACS 61.80.-x, 78.66.Jg
Посилання:
Characterization of quaternary chalcogenide
As-Ge-Te-Si thin films / H.H. Amer, M. Elkordy, M. Zien, A. Dahshan, R.A. Elshamy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 302-307. — Бібліогр.: 34 назв. — англ.
Підтримка:
The authors would like to thank Dr. A. Abdglel, Solid State Physics Department, National Center for Radiation Research and Technology, Atomic Energy Authority, Cairo, Egypt for his help and support.
Дата:
2011
Переглядів:
793
Завантажень:
513
Анотація:
Investigated in this paper is the effect of replacement of Te by Si on the optical
gap and some other physical operation parameters of quaternary chalcogenide As₃₀Ge₁₀Te₆₀₋xSix (where x = 0, 5, 10, 12 and 20 at.%) thin films. Thin films with the
thickness 100-200 nm of As₃₀Ge₁₀Te₆₀₋xSix were prepared using thermal evaporation
of bulk samples. Increasing Si content was found to affect the average heat of
atomization, average coordination number, number of constraints and cohesive energy of
the As₃₀Ge₁₀Te₆₀₋xSix alloys. Optical absorption is due to allowed non-direct transition,
and the energy gap increases with increasing Si content. The chemical bond approach has
been applied successfully to interpret the increase in the optical gap with increasing
silicon content.
