Перегляд за автором "Vuychik, M.V."

Сортувати за: Порядок: Результатів:

  • Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence 
    Valakh, M.Ya.; Sadofyev, Yu.G.; Korsunska, N.O.; Semenova, G.N.; Strelchuk, V.V.; Borkovska, L.V.; Vuychik, M.V.; Sharibaev, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    CdSe/ZnSe structures with a quantum dot extrinsic photoluminescence band related to the defects that contain vacancies in cation sublattice has been investigated. It is shown that such defects can be localized in different ...
  • High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix 
    Strelchuk, V.V.; Valakh, M.Ya.; Vuychik, M.V.; Ivanov, S.V.; Kop'ev, P.S.; Shubina, T.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The intensive up-conversion photoluminescence at low temperatures in CdSe/ZnSe structures with single CdSe inserts of the nominal thickness 1.5 monolayer was observed. Excitation power dependensies show a nearly quadratic ...
  • Phase transition in Cs₃Bi₂I₉ ferroelastic: investigation by Raman scattering technique 
    Motsnyi, F.V.; Vuychik, M.V.; Smolanka, O.M.; Peresh, E.Yu. (Functional Materials, 2005)
    Raman scattering in unpolarized light has been studied for the first time for Cs₃Bi₂I₉ layered ferroelastic at temperatures from 5 to 300 К in the heating mode. Neither soft mode nor frequency softening was ...