Перегляд за автором "Vlasenko, O.I."
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Olikh, Y.M.; Savkina, R.K.; Vlasenko, O.I.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
The results of the investigations of transport properties of n- and p-Hg₁₋xCdxTe semiconductor crystals exposed to intensive ultrasound (≈ 6MHz) are represented. Acousto-stimulated phenomena of concentration change (increase ...
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Vlasenko, O.I.; Babentsov, V.M.; Vlasenko, Z.K.; Ponedilok, A.V.; Kurilo, I.V.; Rudyj, I.O.; Kremenitskiy, V.V.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
By using the method of VPE CdMnTe-CdMnHgTe, CdZnTe-CdZnHgTe heterocompositions were fabricated. Increase of their photo-sensitivity in comparison with the CdTe-CdHgTe structure is explained by removal of deformation stresses ...
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Gentsar, P.O.; Vlasenko, O.I.; Vuichyk, M.V.; Stronski, O.V.
(Functional Materials, 2009)
Studied were the reflection spectra of dynamically chemically etched n-GaAs (100) single crystals with electron concentration of 10¹⁸ to 5·10¹⁸ cm⁻³ in the 1.4-25 μm range as well as the electroreflection ones in 1.3-1.6 ...
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Gnatyuk, V.A.; Gorodnychenko, O.S.; Mozol, P.O.; Vlasenko, O.I.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
The effect of nanosecond ruby laser pulses on the photoelectric and electrical properties of GaAs and InSb single crystals with different pre-treated surfaces was studied. The photoconductivity, surface recombination rate ...
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Vlasenko, O.I.; Gentsar, P.O.; Stronski, A.V.
(Functional Materials, 2009)
The contribution of the real (preliminary chemically etched) (110) surface of n-Ge into electroreflectance effect (energy range 1.9-2.6 eV) basing on polarization anisotropy of electrooptical effect has been separated under ...