Lysenko, V.S.; Tyagulsky, I.P.; Osiyuk, I.N.; Nazarov, A.N.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
The results of experiments on the influence of recharging the electron traps in
a Si-SiO₂ transition layer on the low-temperature characteristics of fully depleted silicon
in insulator MOSFET devices are presented. It ...