Перегляд за автором "Tetyorkin, V."

Сортувати за: Порядок: Результатів:

  • Carrier transport mechanisms in InSb diffusion p-n junctions 
    Sukach, A.; Tetyorkin, V.; Voroschenko, A.; Tkachuk, A.; Kravetskii, M.; Lucyshyn, I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The linearly-graded p-n junctions were prepared by diffusion of cadmium into n-InSb(100) substrate with the electron concentration n ~ 1.6*10¹⁵ cm⁻³ at the temperature T = 77 K. Passivation and protection of mesa structures ...
  • Paraelectric properties of PbTe doped with Ga 
    Tetyorkin, V.; Movchan, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The static dielectric constant was investigated as a function of temperature and carrier concentration in In(Cu)/p-PbTe Schottky contacts. Single crystals of PbTe doped with Ga were used as substrates for preparation of ...
  • Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique 
    Movchan, S.; Sizov, F.; Tetyorkin, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Hot-wall technique has been used for preparation of CdTe-PbTe heterostructures. BaF₂ single crystals served as substrates. Electrical, photoelectric properties as well as noise spectra were investigated. Heterostructures ...