Перегляд за автором "Shalimov, A."

Сортувати за: Порядок: Результатів:

  • Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure 
    Wierzchowski, W.; Misiuk, A.; Wieteska, K.; Bak-Misiuk, J.; Jung, W.; Shalimov, A.; Graeff, W.; Prujszczyk, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Effect of stress created by Ar hydrostatic pressure (HP) up to 1.1 GPa during annealing at the high temperature (HT) 1070 K (HT-HP treatment) on microstructure of Czochralski grown silicon co-implanted with helium and ...
  • Pressure-induced structural transformations in Si:V and Si:V, Mn 
    Misiuk, A.; Barcz, A.; Chow, L.; Bak-Misiuk, J.; Romanowski, P.; Shalimov, A.; Wnuk, A.; Surma, B.; Vanfleet, R.; Prujszczyk, M. (Физика и техника высоких давлений, 2008)
    Semiconductors doped with magnetically active atoms are expected to find application in spintronics. Si samples implanted with Mn⁺ (Si:Mn) or with V⁺ (Si:V) can order magnetically after processing at high temperature (HT) ...