Azarenkov, N.А.; Semenenko, V.Е.; Ovcharenko, А.I.; Pylypenko, M.M.
(Вопросы атомной науки и техники, 2016)
In this paper we consider perfect doped silicon single crystals growth. Special features of anodic etching of n- and p-type single crystals has been revealed. An impact of seed orientation on dislocation and defect structure ...