Перегляд за автором "Safriuk, N.V."

Сортувати за: Порядок: Результатів:

  • Current transport through ohmic contacts to indiume nitride with high defect density 
    Sai, P.O.; Safriuk, N.V.; Shynkarenko, V.V.; Brunkov, P.N.; Jmerik, V.N.; Ivanov, S.V. (Functional Materials, 2018)
    The temperature dependences of contact resistivity are measured for Pd/Ti/Au ohmic contacts toward indium nitride (with different doping level 2.0ċ10¹⁸ and 8.3ċ10¹⁸ cm⁻³) over the wide temperature range (4.2 - 380 K). The ...
  • Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios 
    Kladko, V.P.; Safriuk, N.V.; Stanchu, H.V.; Kuchuk, A.V.; Melnyk, V.P.; Oberemok, A.S.; Kriviy, S.B.; Maksymenko, Z.V.; Belyaev, A.E.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Dependence of deformation characteristics changing in superlattice (SL) structures AlxGa₁₋xN/GaN with Al (~10%) on the well-barrier thickness ratio in period was studied in this work. The deformation state of SL and ...
  • X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates 
    Safriuk, N.V.; Stanchu, G.V.; Kuchuk, A.V.; Kladko, V.P.; Belyaev, A.E.; Machulin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Methodical approaches to the analysis of X-ray data for GaN films grown on various buffer layers and different substrates are presented in this work. Justification of dislocation structure investigation by various methods ...