Перегляд за автором "Sadowski, J."

Сортувати за: Порядок: Результатів:

  • Ferromagnetic nanoclusters in Si:Mn and GaMnAs annealed at high temperature–pressure 
    Bak-Misiuk, J.; Romanowski, P.; Domagala, J.; Misiuk, A.; Dynowska, E.; Lusakowska, E.; Barcz, A.; Sadowski, J.; Caliebe, W. (2009)
    We report the results of defect structures studies of silicon implanted at different temperatures with Mn ions (Si:Mn) and of GaMnAs layers, next annealed under ambient and high pressures. An influence of annealing conditions ...
  • Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As 
    Figielski, T.; Wosinski, T.; Morawski, A.; Pelya, O.; Makosa, A.; Dobrowolski, W.; Wrobel, J.; Sadowski, J.; Jagielski, J.; Ratajczak, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions ...
  • Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers 
    Osinniy, V.; Dybko, K.; Jedrzejczak, A.; Arciszewska, M.; Dobrowolski, W.; Story, T.; Radchenko, M.V.; Sichkovskiy, V.I.; Lashkarev, G.V.; Olsthoorn, S.M.; Sadowski, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga₁₋xMnxAs epitaxial layers (0.015 ≤ x ≤ 0.06). Thermoelectric power analysis gives ...