Перегляд за автором "Rudenko, E.M."

Результати 1-7 з 7

Formation of Nanostructured Relief of TiN—Fe Heterostructures in Hybrid Helicon-Arc Plasma Reactor

Rudenko, E.M.; Korotash, I.V.; Polotskiy, D.Y.; Osipov, L.S.; Dyakin, M.V.; Prikhna, T.A.; Shapovalov, A.P. (Металлофизика и новейшие технологии, 2015)

The features of the physical mechanisms of controlled ion-plasma formation of the new functional nanomaterials are investigated. The technological regimes of formation of functional nanostructured materials under combined ...
Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes

Belogolovskii, M.A.; Revenko, Yu.F.; Gerasimenko, A.Yu.; Svistunov, V.M.; Hatta, E.; Plitnik, G.; Shaternik, V.E.; Rudenko, E.M. (Физика низких температур, 2002)

We report a study of the electron tunneling transport in point-contact junctions formed by a sharp Ag tip and two different highly correlated oxides, namely, a magnetoresistive manganite La₀.₆₆Ca₀.₃₄MnO₃ and a superconducting ...
Nitriding in a helicon discharge as a promising technique for changing the surface properties of steel parts

Rudenko, E.M.; Panarin, V.Ye.; Kyrychok, P.O.; Svavilnyi, M.Ye.; Korotash, I.V.; Palyukh, O.O.; Polotskyi, D.Yu.; Trishchuk, R.L. (Успехи физики металлов, 2019)

The main types of state-of-the-art nitriding technologies, their advantages and disadvantages are considered. An innovative technology of ion nitriding in high-frequency helicon-discharge plasma is proposed. The hardening ...
Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis

Belyaev, A.E.; Bobyl, A.V.; Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Konnikov, S.G.; Kudryk, Ya.Ya.; Markovskiy, E.P.; Milenin, V.V.; Rudenko, E.M.; Tereschenko, G.F.; Ulin, V.P.; Ustinov, V.M.; Tsirlin, G.E.; Shpak, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

The n⁺-n-n⁺-n⁺⁺-GaAs epitaxial structures were MBE-grown on porous nanostructured and traditional (standard) heavily doped n⁺⁺-GaAs substrates. On their basis, we fabricated the Gunn diodes generating power output in the ...
Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique

Shapovalov, A.P.; Korotash, I.V.; Rudenko, E.M.; Sizov, F.F.; Dubyna, D.S.; Osipov, L.S.; Polotskiy, D.Yu.; Tsybri, Z.F.; Korchovyi, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)

Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF ...
Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique

Shapovalov, A.P.; Korotash, I.V.; Rudenko, E.M.; Sizov, F.F.; Dubyna, D.S.; Osipov, L.S.; Polotskiy, D.Yu.; Tsybrii, Z.F.; Korchovyi, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)

Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF ...
Сontrolling parameters determining technological properties of a helicon discharge system

Semenyuk, V.F.; Virko, V.F.; Korotash, I.V.; Osipov, L.S.; Polotsky, D.Yu.; Rudenko, E.M.; Slobodyan, V.M.; Shamrai, K.P. (Вопросы атомной науки и техники, 2013)

In experiments on two helicon sources driven by a planar antenna, it is shown that the plasma density in the drift chamber and the energies and density of the ion flux onto the substrate holder can be effectively controlled ...

Результати 1-7 з 7

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Перегляд за автором "Rudenko, E.M."

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