Перегляд за автором "Rogacheva, E.I."

Сортувати за: Порядок: Результатів:

  • Concentration anomaly of heat capacity in PbTe based solid solutions 
    Rogacheva, E.I.; Sinelnik, N.A.; Krivulkin, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The temperature dependences of the heat capacity in the Pb₁-xMnxTe and Pb₁-xGexTe (x = 0-0.04) solid solutions based on PbTe were obtained in the temperature range of 100-670 K. Pronounced peaks were observed in the isotherms ...
  • Dependence of electrical conductivity on Bi₂Se₃ thin film thickness 
    Menshikova, S.I.; Rogacheva, E.I.; Sipatov, A.Yu.; Fedorov, A.G. (Functional Materials, 2017)
    Effect of film thickness d on electrical conductivity σ of n-Bi₂Se₃ thin films (d = 25-420 nm) prepared by thermal evaporation in vacuum onto glass substrates was investigated. It was established that the electrical ...
  • Investigation of the growth mechanism, structure, and thermoelectric properties of thin PbTe films grown on mica 
    Rogacheva, E.I.; Grigorov, S.N.; Lyubchenko, S.G.; Sipatov, A.Yu.; Volobuev, V.V.; Dresselhaus, M.S. (Functional Materials, 2005)
    The growth mechanisms, structure and thermoelectric properties of thin PbTe films prepared by thermal evaporation in vacuum and subsequent deposition on mica substrates at temperatures Ts = 375, 525 and 635 К were studied. ...
  • Plastic deformation instabilities in Bi crystals under microindentation 
    Rogacheva, E.I.; Yakovleva, A.A.; Lyubchenko, S.G. (Functional Materials, 2005)
    The dependences of microhardness Н on the load on indentor were obtained for bismuth single- and polycrystals. The general tendency to Н decreasing with Р increasing up to ~ 0.15 N is observed. After that the microhardness ...
  • Size effects in thin n-PbTe films 
    Men'shikova, S.I.; Rogacheva, E.I.; Sipatov, A.Yu.; Zubarev, Ye.N. (Functional Materials, 2014-12-29)
    The effect of the film thickness d on the Seebeck coefficient S, the Hall coefficient RH, electrical conductivity σ, charge carrier mobility μH and thermoelectric power factor S²σ of thin films (d = 7-235 nm) prepared by ...
  • Structure of thermally evaporated bismuth selenide thin films 
    Rogacheva, E.I.; Fedorov, A.G.; Krivonogov, S.I.; Mateychenko, P.V.; Dobrotvorskay, M.V.; Garbuz, A.S.; Nashchekina, O.N.; Sipatov, A.Yu. (Functional Materials, 2018)
    The Bi₂Se₃ thin films with thicknesses d = 7-420 nm were grown by thermal evaporation in vacuum of stoichiometric n-Bi₂Se₃ crystals onto heated glass substrates under optimal technological conditions determined by the ...
  • Temperature and concentration dependences of specific heat of Bi₁-xSbx solid solutions 
    Rogacheva, E.I.; Doroshenko, A.N.; Nashchekina, O.N. (Functional Materials, 2018)
    For Bi₁-xSbx solid solutions, the concentration (x = 0 - 0.12) and temperature (170-525 K) dependences of specific heat Cp were obtained. At all temperatures studied, three peaks of Cp were observed near x = 0.015, x = ...
  • Temperature dependences and isotherms of galoanomagnetic properties of Bi doped PbTe crystals and thin films 
    Rogacheva, E.I.; Lyubchenko, S.G.; Vodorez, O.S. (Functional Materials, 2006)
    The temperature dependences of galvanomagnetic properties (the Hall coefficient, electrical conductivity, charge carrier mobility) of (PbTe)₁₀₀₋ₓBiₓ (x = 0-1) alloys obtained by doping PbTe with elementary Bi and thin films ...
  • Temperature dependences of SnTe linear expansion coefficient 
    Rogacheva, E.I.; Popov, V.P.; Nashchekina, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The influence of kinetic factors on the temperature dependences of the linear expansion coefficient (a) for SnTe crystals with different degrees of deviation from stoichiometry was studied. The a(T) dependences were obtained ...
  • Thermoelectric properties of cold pressed samples of semiconductor (Bi₁₋xSbx)₂Te₃ solid solutions 
    Martynova, K.V.; Rogacheva, E.I. (Functional Materials, 2018)
    The composition dependences of thermoelectric (TE) properties of (Bi₁₋xSbx)₂Te₃ solid solutions (0 < x < 1) produced by cold pressing and subsequent annealing were investigated at room temperature. Samples were prepared ...