Dvoretsky, S.A; Ikusov, D.G.; Kvon, Z.D.; Mikhailov, N.N.; Remesnik, V.G.; Smirnov, R.N.; Sidorov, Yu.G.; Shvets, V.A.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
CdxHg₁₋xTe-based (x = 0 – 0.25) quantum wells (QWs) of 8 – 22 nm in
thickness were grown on (013) CdTe/ZnTe/GaAs substrates by molecular beam epitaxy.
The composition and thickness (d) of wide-gap layers (spacers) were ...