Перегляд за автором "Opilat, V.Ya."

Сортувати за: Порядок: Результатів:

  • Degradation of voltage-current characteristics of gallium phosphide diodes due to radiation-induced defects 
    Dubovyi, V.K.; Kanevsky, S.O.; Litovchenko, P.G.; Opilat, V.Ya.; Tartachnik, V.P. (Functional Materials, 2005)
    The GaP diode radiation-induced degradation has been established to be caused mainlу bу the reduction of the current carrier lifetime resulting from introduction of non-radiative deep levels of the radiation-induced defects. ...
  • Ultrasound influence on exciton emission of GaP light diodes 
    Gontaruk, O.M.; Khivrych, V.I.; Pinkovska, M.B.; Tartachnyk, V.P.; Olikh, Ya.M.; Vernydub, R.M.; Opilat, V.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Electroluminescence of GaP light diodes, treated by ultrasound at room and low temperatures has been studied. It has been found that short ultrasound caused improvement of red diode emission characteristics while ...