Перегляд за автором "Mikhailov, N.N."

Сортувати за: Порядок: Результатів:

  • Activation transport under quantum Hall regime in HgTe-based heterostructure 
    Gudina, S.V.; Neverov, V.N.; Novik, E.G.; Ilchenko, E.V.; Harus, G.I.; Shelushinina, N.G.; Podgornykh, S.M.; Yakunin, M.V.; Mikhailov, N.N.; Dvoretsky, S.A. (Физика низких температур, 2017)
    We have measured the temperature (2.9 K < T < 50 K) and magnetic field (0 T < B < 9 T) dependences of longitudinal and Hall resistivities for HgCdTe/HgTe/HgCdTe system with HgTe quantum well width of 20.3 nm. The activation ...
  • HgCdTe quantum wells grown by molecular beam epitaxy 
    Dvoretsky, S.A; Ikusov, D.G.; Kvon, Z.D.; Mikhailov, N.N.; Remesnik, V.G.; Smirnov, R.N.; Sidorov, Yu.G.; Shvets, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    CdxHg₁₋xTe-based (x = 0 – 0.25) quantum wells (QWs) of 8 – 22 nm in thickness were grown on (013) CdTe/ZnTe/GaAs substrates by molecular beam epitaxy. The composition and thickness (d) of wide-gap layers (spacers) were ...
  • HgTe quantum wells with inverted band structure: quantum Hall effect and the large-scale impurity potential 
    Gudina, S.V.; Arapov, Y.G.; Neverov, V.N.; Podgornykh, S.M.; Popov, M.R.; Deriushkina, E.V.; Shelushinina, N.G.; Yakunin, M.V.; Mikhailov, N.N.; Dvoretsky, S.A. (Физика низких температур, 2019)
    We report on the longitudinal and Hall resistivities of a HgTe quantum well with inverted energy spectrum (dQW = 20.3 nm) measured in the quantum Hall (QH) regime at magnetic fields up to 9 T and temperatures 2.9–50 K. The ...
  • Spin splitting of surface states in HgTe quantum wells 
    Dobretsova, A.A.; Kvon, Z.D.; Krishtopenko, S.S.; Mikhailov, N.N.; Dvoretsky, S.A. (Физика низких температур, 2019)
    We report on beating appearance in Shubnikov–de Haas oscillations in conduction band of 18–22 nm HgTe quantum wells under applied top-gate voltage. Analysis of the beatings reveals two electron concentrations at the Fermi ...