Перегляд за автором "Lisovskyy, I.P."

Сортувати за: Порядок: Результатів:

  • Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment 
    Dan’ko, V.A.; Bratus, V.Ya.; Indutnyi, I.Z.; Lisovskyy, I.P.; Zlobin, S.O.; Michailovska, K.V.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The effect of HF and H₂O₂ vapor treatment on the spectral composition and intensity of photoluminescence (PL) in porous oblique deposited nc-Si–SiOx structures have been studied using FTIR, electron-spin resonance (EPR) ...
  • Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films 
    Lisovskyy, I.P.; Litovchenko, V.G.; Zlobin, S.O.; Voitovych, M.V.; Khatsevich, I.M.; Indutnyy, I.Z.; Shepeliavyi, P.E.; Kolomys, O.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The effect of low-temperature annealing on light emitting properties of naSi/SiOx porous column-like nanocomposite films has been studied. Influence of type of chemically active gas or inert ambient on PL characteristics ...
  • Electron field emission from SiOx films 
    Evtukh, А.А.; Indutnyy, I.Z.; Lisovskyy, I.P.; Litvin, Yu.M.; Litovchenko, V.G.; Lytvyn, P.M.; Mazunov, D.O.; Rassamakin, Yu.V.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Efficient electron field emission from silicon flat cathode coated with SiOx film (x 0.3-0.5) was observed both before and after thermal (1000 °C) annealing with subsequent etching in HF solution. Oxide films were produced ...
  • Influence of deposition rate and substrate temperature on structure and optical features of NiO thin film 
    Oberemok, O.S.; Sabov, T.M.; Lisovskyy, I.P.; Khacevych, I.M.; Gudymenko, O.Yo.; Nikirin, V.A.; Voitovych, M.V. (Functional Materials, 2016)
    Nickel oxide thin films were prepared by direct-current magnetron sputtering method at different deposition rates on unheated and heated substrates. It was shown that the deposited films are the dense arrays of nanowhiskers ...
  • Optical study of thermally induced phase separation in evaporated SiOx films 
    Indutnyy, I.Z.; Lisovskyy, I.P.; Mazunov, D.O.; Shepeliavyi, P.E.; Rudko, G.Yu.; Dan'ko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    SiOx thin films (x ~1.3) have been prepared by thermal vacuum evaporation of silicon monoxide. A thermally stimulated (annealling temperatures – 700 and 1000°C) structural transformation of the Si-O phase in the SiOx layers, ...