Перегляд за автором "Lee, S.W."

Сортувати за: Порядок: Результатів:

  • Silicon carbide defects and luminescence centers in current heated 6H-SiC 
    Lee, S.W.; Vlaskina, S.I.; Vlaskin, V.I.; Zaharchenko, I.V.; Gubanov, V.A.; Mishinova, G.N.; Svechnikov, G.S.; Rodionov, V.E.; Podlasov, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    At room temperature yellow photoluminescence with a broad peak of 2.13 eV is a well-known feature of boron-doped 6H-SiC. Usually yellow luminescence is regarded as recombination involving both the boron-related deep ...
  • Silicon carbide phase transition in as-grown 3C-6H polytypes junction 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Svechnikov, G.S.; Rodionov, V.E.; Lee, S.W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Perfect pure (concentration of donors ~ 10¹⁶cm⁻³ ) single crystals with joint polytypes (hexagonal-cubic) or heterojunction investigated using low temperature (4.2 K and 77 K) photoluminescence. Phase transformation ...