Перегляд за автором "Kryshtal, P.G."

Сортувати за: Порядок: Результатів:

  • Deryzemlia, A.M.; Kryshtal, P.G.; Malykhin, D.G.; Radchenko, V.I.; Shirokov, B.M. (Вопросы атомной науки и техники, 2014)
    Results of experiments on obtaining nanocrystalline silicon films with the method of stimulated plasma-enhanced chemical vapor deposition (PECVD) into low frequency induction RF discharge (880 kHz) allowed in silicon ...
  • Deryzemlia, A.N.; Yevsiukov, A.I.; Radchenko, V.I.; Khizhnyak, D.A.; Kryshtal, P.G.; Zhuravlov, A.Yu.; Shijan, A.V.; Strigunovskiy, S.V.; Pelypets, Yu.A.; Shirokov, B.M. (Вопросы атомной науки и техники, 2019)
    In this work, silicon is obtained by plasma-chemical reduction of silicon tetrachloride in an argon-hydrogen low- temperature nonequilibrium plasma. It is shown that in the investigated range of process parameters, the ...
  • Klepikov, V.F.; Shchelokovskyy, P.A.; Kryshtal, P.G.; Tolstolutskiy, A.G.; Uvarov, V.V. (Вопросы атомной науки и техники, 2001)
    Experimental studies of gas-plasma torch optical spectra were performed and the torch temperature on different distances from the target irradiated by high-current REB was measured.