Ryzhikov, V.; Starzhinskiy, N.; Chugai, O.; Seminozhenko, V.; Migal, V.; Komar, V.; Klimenko, I.; Katrunov, K.; Abashin, S.; Oleinik, S.; Sulima, S.; Zenya, I.
(Functional Materials, 2004)
To determine the kinetics of pre-threshold defect formation, studies have been carried out of dielectric permittivity of isovalently doped zinc selenide and Cd₁₋ₓZnₓTe crystals (x = 0.16). X-ray irradiation of the samples ...