Oberemok, O.S.; Litovchenko, V.G.; Gamov, D.V.; Popov, V.G.; Melnik, V.P.; Gudymenko, O.Yo.; Nikirin, V.A.; Khatsevich, І.M.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
The peculiarities of buried layer formation obtained by co-implantation of O2
ions with the energy of 130 keV and carbon ions within the energy range of 30-50 keV
have been investigated. The corresponding ion doses for ...