Перегляд за автором "Horvath, Zs.J."

Сортувати за: Порядок: Результатів:

  • Crystal defects in epitaxial InP layers: electrical and scanning electron microscope study 
    Horvath, Zs.J.; Toth, A.L.; Rakovics, V.; Paszti, Z.; Peto, G. (Functional Materials, 2004)
    Electrical characteristics of p-type Au/lnP Schottky junctions with Pt nanoparticles sandwiched in epitaxial layer have been studied and compared with reference samples. Various anomalies have been obtained, some of them ...
  • Current flow mechanisms in p-i-n­ structures based on cadmium telluride 
    Gorley, P.M.; Demych, M.V.; Makhniy, V.P.; Horvath, Zs.J.; Shenderovsky, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Electrical properties of p-i-n-structures obtained with low-temperature oxygen and lithium diffusion into low-resistive n-CdTe substrates have been investigated. The role of generation-recombination processes as well as ...
  • Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures 
    Horvath, Zs.J.; Orlov, L.K.; Ivina, N.L.; Demidov, E.S.; Vdovin, V.I.; Adam, M.; Szabo, I.; Dozsa, L.; Pashaev, E.M.; Ivanov, Yu.M.; Yakunin, S.N. (Functional Materials, 2004)
    Defects in Si/SiGe heterostructures and electrical behavior thereof have been studied. Misfit dislocations were observed in the epitaxial layers using cross-sectional transmission electron microscopy. These defects cause ...