Misiuk, A.; Barcz, A.; Ulyashin, A.; Prujszczyk, M.; Bak-Misiuk, J.; Formanek, P.
(Физика и техника высоких давлений, 2010)
Deuterium is accumulated by defects in nitrogen-implanted silicon (Si:N). This effect is investigated for Si:N processed at HT ≤ 1400 K, also under enhanced hydrostatic pressure, HP ≤ 1.1 GPa. Si:N was prepared from ...