Перегляд за автором "Balagurov, A.M."

Сортувати за: Порядок: Результатів:

  • Lashkarev, G.V.; Sichkovskyi, V.I.; Radchenko, M.V.; Aleshkevych, P.; Dmitriev, O.I.; Butorin, P.E.; Kovalyuk, Z.D.; Szymczak, R.; Slawska-Waniewska, A.; Nedelko, N.; Yakiela, R.; Balagurov, A.M.; Beskrovnyy, A.I.; Dobrowolsk, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    We present a detailed study of layered semiconductor InSe doped with Mn. Xray and neutron diffraction analyses of (In,Mn)Se single crystals show the presence of a main phase as In₁−xMnxSe solid solution, the second ...